MRF8S9170NR3 vs MRF8S9102NR3 对比

详细并排对比 MRF8S9170NR3 出自 NXP Semiconductors 和 MRF8S9102NR3 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
MRF8S9170NR3 MRF8S9170NR3 - 50W 920-960MHz RF Power LDMOS | NXP

MRF8S9170NR3 - 50W 920-960MHz RF Power LDMOS | NXP

MRF8S9170NR3 ✓ 量产中
NXP Semiconductors
MRF8S9102NR3 MRF8S9102NR3 - 28W RF Power MOSFET 865-960MHz | NXP

MRF8S9102NR3 - 28W RF Power MOSFET 865-960MHz | NXP

MRF8S9102NR3 ✓ 量产中

规格对比

参数 MRF8S9170NR3 MRF8S9102NR3
品牌 NXP Semiconductors NXP Semiconductors
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $38.50 $24.10
Manufacturer NXP Semiconductors NXP Semiconductors (formerly Freescale)
晶体管类型 LDMOS, N-Channel Enhancement-Mode Lateral MOSFET N-Channel Lateral Enhancement-Mode MOSFET
Technology RF Power LDMOS —
Frequency Range 920 MHz to 960 MHz —
Output Power (Average, W-CDMA) 50 W —
Power Gain (Typical) 19.3 dB at 920 MHz, 28 V, 1 A quiescent bias —
Drain-Source Voltage Rating (Vdss) 70 V —
Operating Drain Voltage (Test Condition) 28 V —
Quiescent Bias Current (Idq, Test Condition) 1 A —
Drain Current (Operating) [DATA_NEEDED: typical operating Id at 50 W Pout] —
封装 OM-780-2 (ceramic flange) OM-780-2 (3-pin ceramic, flange mount)
安装类型 Surface Mount / Flange Mount (bolt-down thermal pad) Chassis / flange mount with bolt-down thermal pad
工作温度 [DATA_NEEDED: Tj max and operating range from datasheet] —
Class of Operation Class AB, Class C (W-CDMA) —
Lead-Free / RoHS Lead Free (per digchip listing) —
ESD Protection [DATA_NEEDED: ESD class rating from datasheet] —
Impedance Characterization Series-equivalent large-signal impedance parameters provided —
Test Conditions Note 100% PAR tested for guaranteed output power capability —
Part Family — MRF8S9102N / HV8 series
Application — RF Power Amplifier, W-CDMA base station
Operating Frequency Range — 865 MHz to 960 MHz
Test Frequency — 920 MHz
Drain-Source Operating Voltage (VDS) — 28 V (typical test condition)
Drain-Source Breakdown Voltage (VDSS) — 70 V (max)
Average Output Power (POUT) — 28 W
Drain Current (ID) at bias — 750 mA
Power Gain (Gp) — 23.1 dB
Modulation Format — Single W-CDMA (also Class AB/C capable)
引脚数量 — 3
RoHS 状态 — [DATA_NEEDED: rohs compliance]
Operating Mode — Class AB or Class C

数据手册与资源

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