MRF9030MBR1 vs MRF6S9045NR1 Comparison

Detailed side-by-side comparison of MRF9030MBR1 by NXP Semiconductors and MRF6S9045NR1 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

NXP Semiconductors
MRF9030MBR1 MRF9030MBR1 - 30W, 945MHz RF Power MOSFET | NXP / Freescale

MRF9030MBR1 - 30W, 945MHz RF Power MOSFET | NXP / Freescale

MRF9030MBR1 ✓ Active
NXP Semiconductors
MRF6S9045NR1 MRF6S9045NR1 - 880MHz 10W RF Power LDMOS | NXP

MRF6S9045NR1 - 880MHz 10W RF Power LDMOS | NXP

MRF6S9045NR1 ✓ Active

Specification Comparison

Parameter MRF9030MBR1 MRF6S9045NR1
Brand NXP Semiconductors NXP Semiconductors
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $25.80 $16.40
Manufacturer NXP Semiconductors (formerly Freescale / Motorola) Freescale Semiconductor (acquired by NXP)
Part Family RF Sub-Micron MOSFET Line —
Transistor Type N-Channel Enhancement-Mode Lateral MOSFET LDMOS, N-Channel Enhancement-Mode
Configuration Single, common-source —
Typical Output Power 30 W at 945 MHz —
Operating Frequency Range DC to 1000 MHz —
Power Gain (typical) 20 dB —
Drain-Source Voltage (Vds) Rating 26 V —
Typical Bias Current 250 mA —
Mounting Type Surface Mount (flanged ceramic) Surface Mount
Package TO-272-2 (ceramic, 2-lead flanged) —
Maximum Dissipation (per Partstack) 139 W —
Moisture Sensitivity Level (MSL) 3 —
Application Broadband RF power amplifier / large-signal common-source amplifier 880 MHz Single-Carrier N-CDMA Base Station PA
Polarity / Channel Mode N-Channel, enhancement-mode —
RoHS Status [DATA_NEEDED: RoHS compliance status from manufacturer page] —
Technology — Lateral MOSFET (RF Power)
Drain-Source Voltage (VDS) Rated — 68 V
Operating Drain Voltage (VDD) — 28 V (typical)
Continuous Drain Current (ID) — 10 uA (rated)
Quiescent Current (IDQ) — 350 mA
Output Power (Pout) — 10 W Avg.
Operating Frequency — 880 MHz (up to 1000 MHz)
Power Gain — 22.7 dB
Drain Efficiency — [DATA_NEEDED: typical efficiency percentage at Pout=10W]
Package / Case — TO-270-2 (Case 1265-09, Style 1)
Lead-Free / RoHS — Yes (N suffix = lead-free terminations)
VSWR Ruggedness — Infinite VSWR at rated VDD

Datasheets & Resources

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