MRF9030MBR1 vs MRF6S9045NR1 Comparaison
Comparaison détaillée côte à côte de MRF9030MBR1 par NXP Semiconductors et MRF6S9045NR1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | MRF9030MBR1 | MRF6S9045NR1 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $25,80 | $16,40 |
| Manufacturer | NXP Semiconductors (formerly Freescale / Motorola) | Freescale Semiconductor (acquired by NXP) |
| Part Family | RF Sub-Micron MOSFET Line | — |
| Type de transistor | N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode |
| Configuration | Single, common-source | — |
| Typical Output Power | 30 W at 945 MHz | — |
| Operating Frequency Range | DC to 1000 MHz | — |
| Power Gain (typical) | 20 dB | — |
| Drain-Source Voltage (Vds) Rating | 26 V | — |
| Typical Bias Current | 250 mA | — |
| Type de montage | Surface Mount (flanged ceramic) | Surface Mount |
| Boîtier | TO-272-2 (ceramic, 2-lead flanged) | — |
| Maximum Dissipation (per Partstack) | 139 W | — |
| Niveau de sensibilité à l'humidité (MSL) | 3 | — |
| Application | Broadband RF power amplifier / large-signal common-source amplifier | 880 MHz Single-Carrier N-CDMA Base Station PA |
| Polarity / Channel Mode | N-Channel, enhancement-mode | — |
| Statut RoHS | [DATA_NEEDED: RoHS compliance status from manufacturer page] | — |
| Technology | — | Lateral MOSFET (RF Power) |
| Drain-Source Voltage (VDS) Rated | — | 68 V |
| Operating Drain Voltage (VDD) | — | 28 V (typical) |
| Continuous Drain Current (ID) | — | 10 uA (rated) |
| Quiescent Current (IDQ) | — | 350 mA |
| Output Power (Pout) | — | 10 W Avg. |
| Operating Frequency | — | 880 MHz (up to 1000 MHz) |
| Power Gain | — | 22.7 dB |
| Drain Efficiency | — | [DATA_NEEDED: typical efficiency percentage at Pout=10W] |
| Boîtier / Format | — | TO-270-2 (Case 1265-09, Style 1) |
| Lead-Free / RoHS | — | Yes (N suffix = lead-free terminations) |
| VSWR Ruggedness | — | Infinite VSWR at rated VDD |