MRF9030MBR1 vs MRF6S9045NR1 Comparação

Comparação detalhada lado a lado de MRF9030MBR1 por NXP Semiconductors e MRF6S9045NR1 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MRF9030MBR1 MRF9030MBR1 - 30W, 945MHz RF Power MOSFET | NXP / Freescale

MRF9030MBR1 - 30W, 945MHz RF Power MOSFET | NXP / Freescale

MRF9030MBR1 ✓ Ativo
NXP Semiconductors
MRF6S9045NR1 MRF6S9045NR1 - 880MHz 10W RF Power LDMOS | NXP

MRF6S9045NR1 - 880MHz 10W RF Power LDMOS | NXP

MRF6S9045NR1 ✓ Ativo

Comparação de especificações

Parâmetro MRF9030MBR1 MRF6S9045NR1
Marca NXP Semiconductors NXP Semiconductors
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $25,80 $16,40
Manufacturer NXP Semiconductors (formerly Freescale / Motorola) Freescale Semiconductor (acquired by NXP)
Part Family RF Sub-Micron MOSFET Line —
Tipo de transistor N-Channel Enhancement-Mode Lateral MOSFET LDMOS, N-Channel Enhancement-Mode
Configuration Single, common-source —
Typical Output Power 30 W at 945 MHz —
Operating Frequency Range DC to 1000 MHz —
Power Gain (typical) 20 dB —
Drain-Source Voltage (Vds) Rating 26 V —
Typical Bias Current 250 mA —
Tipo de montagem Surface Mount (flanged ceramic) Surface Mount
Encapsulamento TO-272-2 (ceramic, 2-lead flanged) —
Maximum Dissipation (per Partstack) 139 W —
Nível de sensibilidade à umidade (MSL) 3 —
Application Broadband RF power amplifier / large-signal common-source amplifier 880 MHz Single-Carrier N-CDMA Base Station PA
Polarity / Channel Mode N-Channel, enhancement-mode —
Status RoHS [DATA_NEEDED: RoHS compliance status from manufacturer page] —
Technology — Lateral MOSFET (RF Power)
Drain-Source Voltage (VDS) Rated — 68 V
Operating Drain Voltage (VDD) — 28 V (typical)
Continuous Drain Current (ID) — 10 uA (rated)
Quiescent Current (IDQ) — 350 mA
Output Power (Pout) — 10 W Avg.
Operating Frequency — 880 MHz (up to 1000 MHz)
Power Gain — 22.7 dB
Drain Efficiency — [DATA_NEEDED: typical efficiency percentage at Pout=10W]
Encapsulamento / Caixa — TO-270-2 (Case 1265-09, Style 1)
Lead-Free / RoHS — Yes (N suffix = lead-free terminations)
VSWR Ruggedness — Infinite VSWR at rated VDD

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