MRFE6S9160HR3 vs MRFE6P9220HR3 Comparison
Detailed side-by-side comparison of MRFE6S9160HR3 by NXP Semiconductors and MRFE6P9220HR3 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | MRFE6S9160HR3 | MRFE6P9220HR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $25.20 | $232.20 |
| Manufacturer | NXP Semiconductors | — |
| Transistor Type | N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode, Lateral |
| Technology | HV6E lateral MOSFET (LDMOS-like) | RF Power MOSFET |
| Drain-Source Voltage (V DSS) | 70 V (max) | — |
| Drain Current (continuous) | [DATA_NEEDED: typical drain current at TC=25C] | — |
| Operating Frequency Range | 865 MHz to 960 MHz | — |
| Test Frequency | 880 MHz | 880 MHz |
| Drain Supply Voltage (V DD) | 28 V (typical) | — |
| Output Power (Average) | 35 W (single-carrier N-CDMA, 880 MHz) | — |
| Output Power (PEP) | [DATA_NEEDED: PEP at specified conditions] | — |
| Power Gain (G ps / G p) | 21 dB (typical at 880 MHz) | — |
| Drain Efficiency | 32.4% (typical, N-CDMA, 880 MHz) | [DATA_NEEDED: typical drain efficiency % at 47 W avg] |
| Package / Case | NI-780H-2L (ceramic/metal air-cavity flange-mount) | — |
| Mounting Type | Chassis / Flange mount (through-hole RF leads) | Surface Mount with copper heatsink pad |
| Operating Temperature Range | -40C to +150C (junction) | [DATA_NEEDED: Tj max / operating range] |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Thermal Resistance (R thJC) | [DATA_NEEDED: thermal resistance junction-to-case] | — |
| Input Match | Internally matched input (broadband) | — |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL Level | Not applicable (non-SMD air-cavity package) | — |
| Frequency Range | — | 865 MHz to 1000 MHz |
| Drain-Source Voltage (Vdss) Max | — | 66 V |
| Test Supply Voltage | — | 28 V |
| Test Drain Current | — | 1.6 A |
| Output Power (Avg, N-CDMA) | — | 47 W |
| Peak Output Power | — | 200 W |
| Power Gain (Typ) | — | 20 dB at 880 MHz |
| Package | — | NI-860C3 (NI860ML), ceramic-metal sealed cofired, surface mount |
| Configuration | — | Common source, 2 elements |
| Lead Free Status | — | Lead Free |