MRFE6S9160HR3 vs MRFE6P9220HR3 对比

详细并排对比 MRFE6S9160HR3 出自 NXP Semiconductors 和 MRFE6P9220HR3 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
MRFE6S9160HR3 MRFE6S9160HR3 - 35W, 880MHz RF Power MOSFET | NXP

MRFE6S9160HR3 - 35W, 880MHz RF Power MOSFET | NXP

MRFE6S9160HR3 ✓ 量产中
NXP Semiconductors
MRFE6P9220HR3 MRFE6P9220HR3 - 47W 900MHz RF Power LDMOS MOSFET | NXP

MRFE6P9220HR3 - 47W 900MHz RF Power LDMOS MOSFET | NXP

MRFE6P9220HR3 ✓ 量产中

规格对比

参数 MRFE6S9160HR3 MRFE6P9220HR3
品牌 NXP Semiconductors NXP Semiconductors
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $25.20 $232.20
Manufacturer NXP Semiconductors —
晶体管类型 N-Channel Enhancement-Mode Lateral MOSFET LDMOS, N-Channel Enhancement-Mode, Lateral
Technology HV6E lateral MOSFET (LDMOS-like) RF Power MOSFET
Drain-Source Voltage (V DSS) 70 V (max) —
Drain Current (continuous) [DATA_NEEDED: typical drain current at TC=25C] —
Operating Frequency Range 865 MHz to 960 MHz —
Test Frequency 880 MHz 880 MHz
Drain Supply Voltage (V DD) 28 V (typical) —
Output Power (Average) 35 W (single-carrier N-CDMA, 880 MHz) —
Output Power (PEP) [DATA_NEEDED: PEP at specified conditions] —
Power Gain (G ps / G p) 21 dB (typical at 880 MHz) —
Drain Efficiency 32.4% (typical, N-CDMA, 880 MHz) [DATA_NEEDED: typical drain efficiency % at 47 W avg]
封装 / 外壳 NI-780H-2L (ceramic/metal air-cavity flange-mount) —
安装类型 Chassis / Flange mount (through-hole RF leads) Surface Mount with copper heatsink pad
工作温度范围 -40C to +150C (junction) [DATA_NEEDED: Tj max / operating range]
Storage Temperature [DATA_NEEDED: storage temperature] —
Thermal Resistance (R thJC) [DATA_NEEDED: thermal resistance junction-to-case] —
Input Match Internally matched input (broadband) —
RoHS 状态 Compliant Compliant
Lead-Free Yes —
MSL 等级 Not applicable (non-SMD air-cavity package) —
Frequency Range — 865 MHz to 1000 MHz
Drain-Source Voltage (Vdss) Max — 66 V
Test Supply Voltage — 28 V
Test Drain Current — 1.6 A
Output Power (Avg, N-CDMA) — 47 W
Peak Output Power — 200 W
Power Gain (Typ) — 20 dB at 880 MHz
封装 — NI-860C3 (NI860ML), ceramic-metal sealed cofired, surface mount
Configuration — Common source, 2 elements
Lead Free Status — Lead Free

数据手册与资源

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