MRFE6S9160HR3 vs MRFE6P9220HR3 Comparação
Comparação detalhada lado a lado de MRFE6S9160HR3 por NXP Semiconductors e MRFE6P9220HR3 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | MRFE6S9160HR3 | MRFE6P9220HR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $25,20 | $232,20 |
| Manufacturer | NXP Semiconductors | — |
| Tipo de transistor | N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode, Lateral |
| Technology | HV6E lateral MOSFET (LDMOS-like) | RF Power MOSFET |
| Drain-Source Voltage (V DSS) | 70 V (max) | — |
| Drain Current (continuous) | [DATA_NEEDED: typical drain current at TC=25C] | — |
| Operating Frequency Range | 865 MHz to 960 MHz | — |
| Test Frequency | 880 MHz | 880 MHz |
| Drain Supply Voltage (V DD) | 28 V (typical) | — |
| Output Power (Average) | 35 W (single-carrier N-CDMA, 880 MHz) | — |
| Output Power (PEP) | [DATA_NEEDED: PEP at specified conditions] | — |
| Power Gain (G ps / G p) | 21 dB (typical at 880 MHz) | — |
| Drain Efficiency | 32.4% (typical, N-CDMA, 880 MHz) | [DATA_NEEDED: typical drain efficiency % at 47 W avg] |
| Encapsulamento / Caixa | NI-780H-2L (ceramic/metal air-cavity flange-mount) | — |
| Tipo de montagem | Chassis / Flange mount (through-hole RF leads) | Surface Mount with copper heatsink pad |
| Faixa de temperatura de operação | -40C to +150C (junction) | [DATA_NEEDED: Tj max / operating range] |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Thermal Resistance (R thJC) | [DATA_NEEDED: thermal resistance junction-to-case] | — |
| Input Match | Internally matched input (broadband) | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Nível MSL | Not applicable (non-SMD air-cavity package) | — |
| Frequency Range | — | 865 MHz to 1000 MHz |
| Drain-Source Voltage (Vdss) Max | — | 66 V |
| Test Supply Voltage | — | 28 V |
| Test Drain Current | — | 1.6 A |
| Output Power (Avg, N-CDMA) | — | 47 W |
| Peak Output Power | — | 200 W |
| Power Gain (Typ) | — | 20 dB at 880 MHz |
| Encapsulamento | — | NI-860C3 (NI860ML), ceramic-metal sealed cofired, surface mount |
| Configuration | — | Common source, 2 elements |
| Lead Free Status | — | Lead Free |