MRFE6S9200HR3 vs MRFE6P9220HR3 Comparison
Detailed side-by-side comparison of MRFE6S9200HR3 by NXP Semiconductors and MRFE6P9220HR3 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | MRFE6S9200HR3 | MRFE6P9220HR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $52.30 | $232.20 |
| Transistor Type | N-Channel LDMOS (RF Power) | LDMOS, N-Channel Enhancement-Mode, Lateral |
| Technology | Enhancement-mode LDMOS (HV6E) | RF Power MOSFET |
| Frequency | 880 MHz (test), broadband up to 1000 MHz | — |
| Drain-Source Voltage (Vdss) Rated | 66 V | — |
| Test Supply Voltage | 28 V | 28 V |
| Test Quiescent Current | 1.4 A | — |
| Output Power (Avg) | 58 W (W-CDMA) | — |
| Power Gain | 21 dB at 880 MHz | — |
| Package | NI-880H-2L ceramic air-cavity | NI-860C3 (NI860ML), ceramic-metal sealed cofired, surface mount |
| Mounting Type | Chassis / flange mount, SMD variant 5.08 mm height | Surface Mount with copper heatsink pad |
| Lead Free Status | Lead Free (per datasheet) | Lead Free |
| Input Capacitance (Ciss) | 557.27 pF at 28 V | — |
| Operating Mode | Class AB, Class C, Doherty | — |
| Target Application | W-CDMA base-station final stage | — |
| RoHS Status | Compliant | Compliant |
| Frequency Range | — | 865 MHz to 1000 MHz |
| Test Frequency | — | 880 MHz |
| Drain-Source Voltage (Vdss) Max | — | 66 V |
| Test Drain Current | — | 1.6 A |
| Output Power (Avg, N-CDMA) | — | 47 W |
| Peak Output Power | — | 200 W |
| Power Gain (Typ) | — | 20 dB at 880 MHz |
| Drain Efficiency | — | [DATA_NEEDED: typical drain efficiency % at 47 W avg] |
| Configuration | — | Common source, 2 elements |
| Operating Temperature Range | — | [DATA_NEEDED: Tj max / operating range] |