MRFE6S9200HR3 vs MRFE6P9220HR3 Vergleich
Detaillierter Direktvergleich von MRFE6S9200HR3 von NXP Semiconductors und MRFE6P9220HR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | MRFE6S9200HR3 | MRFE6P9220HR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $52,30 | $232,20 |
| Transistortyp | N-Channel LDMOS (RF Power) | LDMOS, N-Channel Enhancement-Mode, Lateral |
| Technology | Enhancement-mode LDMOS (HV6E) | RF Power MOSFET |
| Frequency | 880 MHz (test), broadband up to 1000 MHz | — |
| Drain-Source Voltage (Vdss) Rated | 66 V | — |
| Test Supply Voltage | 28 V | 28 V |
| Test Quiescent Current | 1.4 A | — |
| Output Power (Avg) | 58 W (W-CDMA) | — |
| Power Gain | 21 dB at 880 MHz | — |
| Gehäuse | NI-880H-2L ceramic air-cavity | NI-860C3 (NI860ML), ceramic-metal sealed cofired, surface mount |
| Montageart | Chassis / flange mount, SMD variant 5.08 mm height | Surface Mount with copper heatsink pad |
| Lead Free Status | Lead Free (per datasheet) | Lead Free |
| Input Capacitance (Ciss) | 557.27 pF at 28 V | — |
| Operating Mode | Class AB, Class C, Doherty | — |
| Target Application | W-CDMA base-station final stage | — |
| RoHS-Status | Compliant | Compliant |
| Frequency Range | — | 865 MHz to 1000 MHz |
| Test Frequency | — | 880 MHz |
| Drain-Source Voltage (Vdss) Max | — | 66 V |
| Test Drain Current | — | 1.6 A |
| Output Power (Avg, N-CDMA) | — | 47 W |
| Peak Output Power | — | 200 W |
| Power Gain (Typ) | — | 20 dB at 880 MHz |
| Drain Efficiency | — | [DATA_NEEDED: typical drain efficiency % at 47 W avg] |
| Configuration | — | Common source, 2 elements |
| Betriebstemperaturbereich | — | [DATA_NEEDED: Tj max / operating range] |