MRFE6S9200HR3 vs MRFE6P9220HR3 Сравнение
Подробное сравнение бок о бок MRFE6S9200HR3 от NXP Semiconductors и MRFE6P9220HR3 от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | MRFE6S9200HR3 | MRFE6P9220HR3 |
|---|---|---|
| Бренд | NXP Semiconductors | NXP Semiconductors |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $52,30 | $232,20 |
| Тип транзистора | N-Channel LDMOS (RF Power) | LDMOS, N-Channel Enhancement-Mode, Lateral |
| Technology | Enhancement-mode LDMOS (HV6E) | RF Power MOSFET |
| Frequency | 880 MHz (test), broadband up to 1000 MHz | — |
| Drain-Source Voltage (Vdss) Rated | 66 V | — |
| Test Supply Voltage | 28 V | 28 V |
| Test Quiescent Current | 1.4 A | — |
| Output Power (Avg) | 58 W (W-CDMA) | — |
| Power Gain | 21 dB at 880 MHz | — |
| Корпус | NI-880H-2L ceramic air-cavity | NI-860C3 (NI860ML), ceramic-metal sealed cofired, surface mount |
| Тип монтажа | Chassis / flange mount, SMD variant 5.08 mm height | Surface Mount with copper heatsink pad |
| Lead Free Status | Lead Free (per datasheet) | Lead Free |
| Input Capacitance (Ciss) | 557.27 pF at 28 V | — |
| Operating Mode | Class AB, Class C, Doherty | — |
| Target Application | W-CDMA base-station final stage | — |
| Статус RoHS | Compliant | Compliant |
| Frequency Range | — | 865 MHz to 1000 MHz |
| Test Frequency | — | 880 MHz |
| Drain-Source Voltage (Vdss) Max | — | 66 V |
| Test Drain Current | — | 1.6 A |
| Output Power (Avg, N-CDMA) | — | 47 W |
| Peak Output Power | — | 200 W |
| Power Gain (Typ) | — | 20 dB at 880 MHz |
| Drain Efficiency | — | [DATA_NEEDED: typical drain efficiency % at 47 W avg] |
| Configuration | — | Common source, 2 elements |
| Диапазон рабочих температур | — | [DATA_NEEDED: Tj max / operating range] |