MT40A512M16JY-07EAIT:B vs K4A8G085WC-BIWE Comparison
Detailed side-by-side comparison of MT40A512M16JY-07EAIT:B by Micron Technology and K4A8G085WC-BIWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT40A512M16JY-07EAIT:B - 8Gb DDR4 SDRAM 512Mx16 | Micron
MT40A512M16JY-07EAIT:B ✓ Active
Specification Comparison
| Parameter | MT40A512M16JY-07EAIT:B | K4A8G085WC-BIWE |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $8.10 | $6.29 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit | — |
| Organization | 512M x 16 | 1G x 8 |
| Clock Frequency | 1.33 GHz | — |
| Data Rate | 2666 MT/s | 3200 Mbps |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Voltage | 2.5V, -125mV, +250mV | — |
| Interface | Parallel | POD-12 |
| Package | 96-FBGA (8x14) | 78-FBGA |
| Operating Temperature Range | -40°C to +105°C (AIT grade) | -40°C to +95°C |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C | — |
| I/O Type | 1.2V pseudo open-drain | — |
| VREFDQ | On-die, internal, adjustable | — |
| AEC-Q100 | Qualified (AIT suffix) | — |
| RoHS | Compliant | — |
| Density | — | 8 Gb |
| Supply Voltage (VDD) | — | 1.2 V |
| Supply Voltage (VDDQ) | — | 1.2 V |
| Mounting Type | — | Surface Mount |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| CAS Latency | — | 22 (CL22) |
| Refresh | — | Auto-refresh, self-refresh |
| RoHS Status | — | Compliant |
| Lead-Free | — | Yes |