MT40A512M16JY-07EAIT:B vs K4A8G085WC-BIWE 对比
详细并排对比 MT40A512M16JY-07EAIT:B 出自 Micron Technology 和 K4A8G085WC-BIWE 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT40A512M16JY-07EAIT:B - 8Gb DDR4 SDRAM 512Mx16 | Micron
MT40A512M16JY-07EAIT:B ✓ 量产中
规格对比
| 参数 | MT40A512M16JY-07EAIT:B | K4A8G085WC-BIWE |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $8.10 | $6.29 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 8 Gbit | — |
| 存储组织 | 512M x 16 | 1G x 8 |
| Clock Frequency | 1.33 GHz | — |
| 数据速率 | 2666 MT/s | 3200 Mbps |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Voltage | 2.5V, -125mV, +250mV | — |
| 接口 | Parallel | POD-12 |
| 封装 | 96-FBGA (8x14) | 78-FBGA |
| 工作温度范围 | -40°C to +105°C (AIT grade) | -40°C to +95°C |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C | — |
| I/O Type | 1.2V pseudo open-drain | — |
| VREFDQ | On-die, internal, adjustable | — |
| AEC-Q100 | Qualified (AIT suffix) | — |
| RoHS | Compliant | — |
| Density | — | 8 Gb |
| Supply Voltage (VDD) | — | 1.2 V |
| Supply Voltage (VDDQ) | — | 1.2 V |
| 安装类型 | — | Surface Mount |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| CAS 延迟 | — | 22 (CL22) |
| Refresh | — | Auto-refresh, self-refresh |
| RoHS 状态 | — | Compliant |
| Lead-Free | — | Yes |