MT40A512M16LY-075:E vs MT40A512M16JY-083E Comparison

Detailed side-by-side comparison of MT40A512M16LY-075:E by Micron Technology and MT40A512M16JY-083E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT40A512M16LY-075:E MT40A512M16LY-075:E - 8Gb DDR4 SDRAM 2666MT/s | Micron

MT40A512M16LY-075:E - 8Gb DDR4 SDRAM 2666MT/s | Micron

MT40A512M16LY-075:E ✓ Active
Micron Technology
MT40A512M16JY-083E MT40A512M16JY-083E - 8Gb DDR4 SDRAM 2400MT/s x16 | Micron

MT40A512M16JY-083E - 8Gb DDR4 SDRAM 2400MT/s x16 | Micron

MT40A512M16JY-083E ✓ Active

Specification Comparison

Parameter MT40A512M16LY-075:E MT40A512M16JY-083E
Brand Micron Technology Micron Technology
Category Memory ICs DRAM
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $5.80 $5.85
Memory Type DDR4 SDRAM DDR4 SDRAM (Automotive)
Memory Size 8 Gbit (512M x 16) —
Data Rate 2666 MT/s 2400 MT/s (speed grade -083E)
Clock Frequency 1.33 GHz 1.2 GHz (tCK = 0.83 ns)
CAS Latency 19 —
Supply Voltage (VDD/VDDQ) 1.2V ±60mV —
VPP Supply 2.5V (-125mV, +250mV) —
Interface Parallel —
Package 96-FBGA (7.5x13.5mm) 96-FBGA (8 x 14 mm)
Operating Temperature Range 0°C to +95°C —
Refresh Time 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C —
Internal Banks (x16) 8 banks (4 groups of 2) —
I/O Type 1.2V pseudo open-drain —
RoHS Compliant —
Mounting Type Surface Mount Surface Mount
Density — 8 Gbit
Organization — 512M x 16
VDD Supply Voltage — 1.2 V +/- 60 mV
VDDQ Supply Voltage — 1.2 V +/- 60 mV
VPP Supply Voltage — 2.5 V, -125 mV, +250 mV
I/O Interface — 1.2 V pseudo open-drain
VREFDQ — On-die internal adjustable generation
Refresh Structure — 8192-cycle refresh
Refresh Window — 64 ms at -40C to 85C; 32 ms at >85C to 95C; 16 ms at >95C
ECCN — EAR99
Halogen Free — Compliant
Country of Origin — China

Datasheets & Resources

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