MT40A512M16LY-075:E vs MT40A512M16LY-062E Comparison
Detailed side-by-side comparison of MT40A512M16LY-075:E by Micron Technology and MT40A512M16LY-062E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT40A512M16LY-075:E - 8Gb DDR4 SDRAM 2666MT/s | Micron
MT40A512M16LY-075:E ✓ Active
Specification Comparison
| Parameter | MT40A512M16LY-075:E | MT40A512M16LY-062E |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.80 | $6.65 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit (512M x 16) | 8 Gbit |
| Data Rate | 2666 MT/s | 3200 MT/s |
| Clock Frequency | 1.33 GHz | 1.6 GHz |
| CAS Latency | 19 | — |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Supply | 2.5V (-125mV, +250mV) | — |
| Interface | Parallel | — |
| Package | 96-FBGA (7.5x13.5mm) | 96-ball FBGA (7.5 x 13.5 mm) |
| Operating Temperature Range | 0°C to +95°C | — |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C | — |
| Internal Banks (x16) | 8 banks (4 groups of 2) | — |
| I/O Type | 1.2V pseudo open-drain | — |
| RoHS | Compliant | — |
| Mounting Type | Surface Mount | Surface Mount |
| Organization | — | 512M x 16 |
| Access Time | — | 19 ns |
| Supply Voltage VDD/VDDQ | — | 1.2 V +/- 60 mV |
| Supply Voltage VPP | — | 2.5 V (-125 mV, +250 mV) |
| Bank Architecture | — | 16 banks in 2 groups of 4 (x16) |
| Refresh | — | 8192-cycle; 64 ms at -40C to +85C, 32 ms >85C to +95C, 16 ms >95C |
| I/O Interface | — | 1.2 V pseudo open-drain |
| Features | — | Auto self-refresh, write leveling, dynamic ODT, CRC, data mask, auto precharge, async reset, ZQ calibration, on-die adjustable VREFDQ |
| Operating Temperature | — | -40C to +95C (IT grade) |
| RoHS Status | — | Compliant |