MT40A512M16LY-075:E vs H5AN8G6NDJR-XNC Comparison
Detailed side-by-side comparison of MT40A512M16LY-075:E by Micron Technology and H5AN8G6NDJR-XNC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT40A512M16LY-075:E
MT40A512M16LY-075:E - 8Gb DDR4 SDRAM 2666MT/s | Micron
MT40A512M16LY-075:E β Active
Specification Comparison
| Parameter | MT40A512M16LY-075:E | H5AN8G6NDJR-XNC |
|---|---|---|
| Brand | Micron Technology | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.80 | $55.68 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit (512M x 16) | 8 Gb |
| Data Rate | 2666 MT/s | 3200 Mbps |
| Clock Frequency | 1.33 GHz | β |
| CAS Latency | 19 | β |
| Supply Voltage (VDD/VDDQ) | 1.2V Β±60mV | β |
| VPP Supply | 2.5V (-125mV, +250mV) | β |
| Interface | Parallel | β |
| Package | 96-FBGA (7.5x13.5mm) | FBGA-96 (13x7.5 mm) |
| Operating Temperature Range | 0Β°C to +95Β°C | β |
| Refresh Time | 64ms at -40Β°C to 85Β°C, 32ms at >85Β°C to 95Β°C, 16ms at >95Β°C to 105Β°C | β |
| Internal Banks (x16) | 8 banks (4 groups of 2) | β |
| I/O Type | 1.2V pseudo open-drain | β |
| RoHS | Compliant | Compliant |
| Mounting Type | Surface Mount | β |
| Memory Organization | β | 512M x16 |
| Supply Voltage (VDD) | β | 1.2 V (max 1.26 V) |
| Number of Terminals | β | 96 |
| Maximum Operating Temperature | β | 85 Β°C |
| Input/Output Type | β | COMMON |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |
| Auto Self-Refresh | β | Yes |
| Auto Precharge | β | Yes |
| Data Mask | β | Yes |
| Dynamic On-Chip Termination | β | Yes |
| ZQ Calibration | β | Yes |
| CRC Function | β | Yes |
| Write Leveling | β | Yes |
| Asynchronous Reset | β | Yes |