MT40A512M16TB-062E:R vs MT40A512M16TB-062E:J Comparison

Detailed side-by-side comparison of MT40A512M16TB-062E:R by Micron Technology and MT40A512M16TB-062E:J by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT40A512M16TB-062E:R MT40A512M16TB-062E:R - 8Gb DDR4 SDRAM 3200MT/s | Micron

MT40A512M16TB-062E:R - 8Gb DDR4 SDRAM 3200MT/s | Micron

MT40A512M16TB-062E:R ✓ Active
Micron Technology
MT40A512M16TB-062E:J MT40A512M16TB-062E:J - 8Gb DDR4 SDRAM 1.6GHz | Micron

MT40A512M16TB-062E:J - 8Gb DDR4 SDRAM 1.6GHz | Micron

MT40A512M16TB-062E:J ✓ Active

Specification Comparison

Parameter MT40A512M16TB-062E:R MT40A512M16TB-062E:J
Brand Micron Technology Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $60.00 $8.10
Memory Type DDR4 SDRAM SDRAM - DDR4
Memory Size 8 Gbit (512M x 16) 8Gbit (512M x 16)
Data Rate 3200 MT/s —
Clock Frequency 1600 MHz 1.6 GHz
CAS Latency 22 —
Supply Voltage (VDD/VDDQ) 1.2V ±60mV 1.2V ±60mV
VPP Voltage 2.5V (-125mV, +250mV) —
Operating Temperature 0°C to +95°C —
Package 96-FBGA (7.5x13 mm) 96-FBGA (7.5x13.5 mm)
Interface Parallel —
Data Bus Width 16 bits —
Refresh Time 8192 cycles (64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C) 64ms at -40°C to 85°C; 32ms at >85°C to 95°C; 16ms at >95°C
I/O Type 1.2V pseudo open-drain 1.2V pseudo open-drain
Features Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration —
RoHS Status Compliant Compliant
Access Time — 19 ns
VPP Supply Voltage — 2.5V (-125mV, +250mV)
Internal Banks (x16) — 8 (2 groups of 4 banks each)
Prefetch Architecture — 8n-bit
Operating Temperature Range — 0°C to 95°C
Lead-Free — Yes
Mounting Type — Surface Mount

Datasheets & Resources

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