MT40A512M16TB-062E:J vs MT40A512M16TB-062E:R Comparison

Detailed side-by-side comparison of MT40A512M16TB-062E:J by Micron Technology and MT40A512M16TB-062E:R by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT40A512M16TB-062E:J

MT40A512M16TB-062E:J - 8Gb DDR4 SDRAM 1.6GHz | Micron

MT40A512M16TB-062E:J ✓ Active
Micron Technology
MT40A512M16TB-062E:R

MT40A512M16TB-062E:R - 8Gb DDR4 SDRAM 3200MT/s | Micron

MT40A512M16TB-062E:R ✓ Active

Specification Comparison

Parameter MT40A512M16TB-062E:J MT40A512M16TB-062E:R
Brand Micron Technology Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $8.10 $60.00
Memory Type SDRAM - DDR4 DDR4 SDRAM
Memory Size 8Gbit (512M x 16) 8 Gbit (512M x 16)
Clock Frequency 1.6 GHz 1600 MHz
Access Time 19 ns
Supply Voltage (VDD/VDDQ) 1.2V ±60mV 1.2V ±60mV
VPP Supply Voltage 2.5V (-125mV, +250mV)
I/O Type 1.2V pseudo open-drain 1.2V pseudo open-drain
Refresh Time 64ms at -40°C to 85°C; 32ms at >85°C to 95°C; 16ms at >95°C 8192 cycles (64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C)
Internal Banks (x16) 8 (2 groups of 4 banks each)
Prefetch Architecture 8n-bit
Package 96-FBGA (7.5x13.5 mm) 96-FBGA (7.5x13 mm)
Operating Temperature Range 0°C to 95°C
RoHS Status Compliant Compliant
Lead-Free Yes
Mounting Type Surface Mount
Data Rate 3200 MT/s
CAS Latency 22
VPP Voltage 2.5V (-125mV, +250mV)
Operating Temperature 0°C to +95°C
Interface Parallel
Data Bus Width 16 bits
Features Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration

Datasheets & Resources

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