MT40A512M16TB-062E:R vs MT40A512M16JY-075E Comparison
Detailed side-by-side comparison of MT40A512M16TB-062E:R by Micron Technology and MT40A512M16JY-075E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT40A512M16TB-062E:R - 8Gb DDR4 SDRAM 3200MT/s | Micron
MT40A512M16TB-062E:R ✓ Active
Specification Comparison
| Parameter | MT40A512M16TB-062E:R | MT40A512M16JY-075E |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $60.00 | $30.50 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit (512M x 16) | 8 Gbit |
| Data Rate | 3200 MT/s | 2666 MT/s |
| Clock Frequency | 1600 MHz | 1.33 GHz |
| CAS Latency | 22 | — |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | 1.14V to 1.26V |
| VPP Voltage | 2.5V (-125mV, +250mV) | 2.5V (-125mV, +250mV) |
| Operating Temperature | 0°C to +95°C | — |
| Package | 96-FBGA (7.5x13 mm) | 96-FBGA (8x14) |
| Interface | Parallel | Parallel |
| Data Bus Width | 16 bits | — |
| Refresh Time | 8192 cycles (64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C) | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C |
| I/O Type | 1.2V pseudo open-drain | 1.2V pseudo open-drain |
| Features | Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration | Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC |
| RoHS Status | Compliant | Compliant |
| Organization | — | 512M x 16 |
| Mounting Type | — | Surface Mount |
| Operating Temperature Range | — | 0°C to +95°C (TC) |