MT40A512M16TD-062E AUT:R vs K4A4G165WG-BCWE Comparison
Detailed side-by-side comparison of MT40A512M16TD-062E AUT:R by Micron Technology and K4A4G165WG-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT40A512M16TD-062E AUT:R - 8Gbit DDR4 SDRAM | Micron
MT40A512M16TD-062E AUT:R ✓ ActiveSamsung Electronics
K4A4G165WG-BCWE - 4Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A4G165WG-BCWE ✓ ActiveSpecification Comparison
| Parameter | MT40A512M16TD-062E AUT:R | K4A4G165WG-BCWE |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.90 | $16.90 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM (volatile DRAM) |
| Memory Size | 8 Gbit | 4 Gbit |
| Organization | 512M x 16 | — |
| Interface | Parallel | Parallel |
| Clock Frequency / Data Rate | 1.6 GHz | — |
| Access Time | 19 ns | 19 ns |
| Supply Voltage | 1.2 V | 1.2 V |
| Package | 96-FBGA (7.5 x 13 mm) | FBGA-96 |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 (AUT grade) | — |
| Packaging Suffix | -R (Tape & Reel) | — |
| Speed Grade | -062E | — |
| Technology Family | DDR4 SDRAM (SDR/DDR family) | — |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | — |
| Refresh Rate | [DATA_NEEDED: refresh interval spec] | [DATA_NEEDED: refresh interval] |
| Memory Organization | — | 256M x 16 |
| Data Rate | — | 3200 Mbps |
| Operating Temperature | — | 0C to +85C |
| Memory Format | — | DRAM |
| Technology | — | DDR4 |
| Product Status | — | Active |
| RoHS Status | — | Compliant (per JLCPCB listing) |
| Clock Frequency | — | [DATA_NEEDED: clock frequency / tCK range] |
| CAS Latency | — | [DATA_NEEDED: CAS latency] |