MT41K256M16 vs K4B4G1646E-BYMA Comparison
Detailed side-by-side comparison of MT41K256M16 by Micron Technology and K4B4G1646E-BYMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | MT41K256M16 | K4B4G1646E-BYMA |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Category | DRAM | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.42 | $14.32 |
| Memory Type | DDR3L SDRAM (1.35V) | DDR3L SDRAM |
| Memory Size | 4 Gbit | — |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35 V (1.5V-compatible mode supported) | — |
| Banks | 8 | — |
| Package | 96-ball FBGA | FBGA-96 |
| Mounting Type | Surface Mount | Surface Mount |
| Speed Grade Options | -093 (2133 MT/s), -107 (1866 MT/s), -125 (1600 MT/s) [per family ordering options] | — |
| Interface | Parallel, source-synchronous DDR | — |
| On-Die Termination | Yes (ODT) | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range for the full MPN suffix] | 0°C to +95°C |
| Refresh | 8K refresh cycles / 64 ms | — |
| CAS Latency Options | [DATA_NEEDED: CL options for the full MPN suffix] | — |
| Die Revision | Refer to DDR3 (1.5V) SDRAM Die Rev :E datasheet for 1.5V mode specs | — |
| RoHS Status | Compliant | — |
| ECCN | EAR99 | — |
| Lead Free | Yes (per DigiKey product listing) | — |
| Density | — | 4 Gb |
| Supply Voltage | — | 1.35 V (1.28 V to 1.575 V) |
| Clock Frequency | — | 933 MHz |
| Data Rate | — | 1866 Mbps/pin |
| Operating Current | — | 14 mA |
| Standby Current | — | 2 mA, 3 mA |
| RoHS | — | Compliant |
| CAS Latency | — | [DATA_NEEDED: CAS Latency] |
| Burst Length | — | [DATA_NEEDED: Burst Length] |
| Number of Pins | — | 96 |