MT41K256M16HA-107AAT:E vs K4B4G1646D-BYH9 Comparison
Detailed side-by-side comparison of MT41K256M16HA-107AAT:E by Micron Technology and K4B4G1646D-BYH9 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT41K256M16HA-107AAT:E - 4Gbit DDR3L SDRAM | Micron
MT41K256M16HA-107AAT:E ✓ ActiveSamsung Electronics
K4B4G1646D-BYH9 - 4Gb DDR3L SDRAM 256Mx16 1333Mbps | Samsung
K4B4G1646D-BYH9 ✓ ActiveSpecification Comparison
| Parameter | MT41K256M16HA-107AAT:E | K4B4G1646D-BYH9 |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.95 | $2.30 |
| Memory Type | DDR3L SDRAM | — |
| Memory Size | 4Gbit (256M x 16) | — |
| Data Rate | 933 MHz (DDR3L-1866) | 1333 Mbps |
| Access Time | 20 ns | — |
| Supply Voltage | 1.35V | 1.35 V |
| Interface | Parallel | — |
| Package | 96-FBGA (9x14mm) | 96FBGA |
| Operating Temperature | 0°C to +95°C (Tc) | 0 ~ 85 °C |
| Mounting Type | Surface Mount | — |
| RoHS Status | Compliant | — |
| Organization | 256M x 16 | 256M x 16 |
| CAS Latency | 13 (typical) | Programmable |
| Burst Length | 8, 4 | — |
| On-Die Termination | Yes | Yes |
| Refresh | Auto-refresh, self-refresh | — |
| Density | — | 4 Gb |
| Number of Banks | — | 8 |
| Write Latency | — | Programmable |
| Internal Calibration | — | Yes |
| Lead-Free | — | Yes |
| Halogen Free | — | Yes |
| RoHS Compliant | — | Yes |
| Die Version | — | D-die |