MT41K256M16HA-125:E vs K4B4G1646D-BCK00 Comparison
Detailed side-by-side comparison of MT41K256M16HA-125:E by Micron Technology and K4B4G1646D-BCK00 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT41K256M16HA-125:E - 4Gbit DDR3L SDRAM 800MHz | Micron
MT41K256M16HA-125:E ✓ ActiveSamsung Electronics
K4B4G1646D-BCK00 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BCK00 ✓ ActiveSpecification Comparison
| Parameter | MT41K256M16HA-125:E | K4B4G1646D-BCK00 |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.10 | $5.90 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gbit | 4 Gb |
| Organization | 256M x 16 | 256M x 16 |
| Clock Frequency | 800 MHz | — |
| CAS Latency | 13.75 ns | 11 (at 1600 Mbps) |
| Supply Voltage (VDD) | 1.35 V (DDR3L) | — |
| Supply Voltage (VDDQ) | 1.35 V | — |
| Package | 96-FBGA (9x14 mm) | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Number of Pins | 96 | — |
| Mounting Type | Surface Mount | — |
| Operating Temperature Range | 0°C to +95°C (TC) | — |
| RoHS Status | Compliant | — |
| Lead-Free | Yes | Yes |
| Data Bus Width | 16 bits | — |
| Logic Family | CMOS | — |
| Speed Grade | — | DDR3-1600 (800 MHz) |
| Data Rate | — | 1600 Mbps/pin |
| Supply Voltage | — | 1.35V (1.283V to 1.45V) |
| I/O Voltage | — | 1.35V |
| Operating Temperature | — | 0°C to 95°C (Tcase) |
| Number of Banks | — | 8 |
| Burst Length | — | 8, 4 (with burst chop) |
| RoHS | — | Compliant |
| Halogen Free | — | Yes |