MT41K256M16LY-107:N vs K4B4G1646E-BYK0 Comparison
Detailed side-by-side comparison of MT41K256M16LY-107:N by Micron Technology and K4B4G1646E-BYK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT41K256M16LY-107:N - 4Gbit DDR3L SDRAM 933MHz | Micron
MT41K256M16LY-107:N ✓ ActiveSpecification Comparison
| Parameter | MT41K256M16LY-107:N | K4B4G1646E-BYK0 |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $8.10 | $1.80 |
| Memory Type | SDRAM - DDR3L | DDR3L SDRAM |
| Memory Size | 4 Gbit | — |
| Organization | 256M x 16 | 256M x 16 |
| Data Bus Width | 16 bit | — |
| Maximum Clock Frequency | 933 MHz | — |
| Access Time | 20 ns | — |
| Supply Voltage | 1.35 V | 1.35 V (1.283 V to 1.45 V) |
| Package / Case | 96-FBGA (7.5x13.5) | — |
| Mounting Style | Surface Mount | — |
| Operating Temperature Range | 0°C to +95°C (Tc) | — |
| RoHS | Compliant | Compliant |
| Memory Format | DRAM | — |
| Technology | DDR3L | — |
| Supply Voltage - Min | 1.283 V | — |
| Supply Voltage - Max | 1.45 V | — |
| Density | — | 4 Gb |
| Data Rate | — | DDR3-1600 (800 MHz) |
| Package | — | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Operating Temperature | — | 0°C to +95°C (TC) |
| CAS Latency | — | 11 (CL-tRCD-tRP) |
| Burst Length | — | 8 (fixed), 4 (burst chop) |
| On-Die Termination | — | Yes (dynamic ODT) |
| ZQ Calibration | — | Yes |
| Auto Precharge | — | Yes |
| Self-Refresh | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |