MT41K256M16RE-125:D vs H5TC4G63AFR-PBJ Comparison
Detailed side-by-side comparison of MT41K256M16RE-125:D by Micron Technology and H5TC4G63AFR-PBJ by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT41K256M16RE-125:D - 4Gb DDR3L SDRAM 256Mx16 | Micron
MT41K256M16RE-125:D ✓ ActiveSpecification Comparison
| Parameter | MT41K256M16RE-125:D | H5TC4G63AFR-PBJ |
|---|---|---|
| Brand | Micron Technology | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.19 | $7.50 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | — |
| Organization | 256M x 16 | — |
| Supply Voltage | 1.35 V | 1.35 V |
| Data Rate | 1600 MT/s | [DATA_NEEDED: Data rate (e.g., 1600 Mbps)] |
| CAS Latency | 11 | [DATA_NEEDED: CAS Latency] |
| Package | FBGA-96 (9x14 mm) | 96-ball TFBGA |
| Operating Temperature | 0C to +95C (TC) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Burst Length | 8, 4 | — |
| On-Die Termination | Yes | — |
| Auto-Refresh | Yes | — |
| Self-Refresh | Yes | — |
| Ball Pitch | 0.8 mm | — |
| Memory Size | — | 4 Gb (256M x 16) |
| Temperature Grade | — | Industrial (-40°C to +95°C) |
| Refresh Cycles | — | 8192 |
| Package Shape | — | Rectangular |
| Number of Terminals | — | 96 |
| Access Time | — | 0.225 ns (from H5TC4G63AFR-PBR datasheet) |
| Auto Self-Refresh | — | Yes |
| Data Mask | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| RoHS Status | — | [DATA_NEEDED: RoHS Status] |