MT41K256M16TW-107 vs K4B4G1646D-BYMA0 Comparison
Detailed side-by-side comparison of MT41K256M16TW-107 by Micron Technology and K4B4G1646D-BYMA0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BYMA0 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BYMA0 ✓ ActiveSpecification Comparison
| Parameter | MT41K256M16TW-107 | K4B4G1646D-BYMA0 |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Unit Price (USD) | $14.10 | — |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Memory Size | 4 Gbit | — |
| Organization | 256M x 16 | 256M x 16 |
| Interface | Parallel | — |
| Clock Frequency | 933 MHz (DDR3L-1866) | — |
| Access Time | 20 ns | — |
| Supply Voltage | 1.35 V | 1.35 V |
| Data Bus Width | 16 bit | — |
| Package | 96-FBGA (8x14 mm) | 96-ball FBGA |
| Mounting Type | Surface Mount | — |
| Operating Temperature | 0C to +95C (commercial :P grade) | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | Supported |
| Asynchronous Reset | Yes | Supported |
| Data Mask | Yes | Supported |
| Write Leveling | Yes | — |
| Dynamic On-Die Termination | Yes | — |
| ZQ Calibration | Yes | Supported |
| RoHS Status | [DATA_NEEDED: RoHS status] | — |
| MSL Level | [DATA_NEEDED: MSL level] | — |
| Total Memory Size | — | 4 Gb |
| Data Rate | — | 1866 Mbps (PC3-14900) |
| Operating Temperature Range | — | 0°C to +85°C |
| Lead-Free | — | Yes |
| Halogen Free | — | Yes |
| RoHS Compliant | — | Yes |
| Dynamic On-Chip Termination | — | Supported |