MT41K256M16TW-107 vs MT41K256M16TW-107:P Comparison
Detailed side-by-side comparison of MT41K256M16TW-107 by Micron Technology and MT41K256M16TW-107:P by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT41K256M16TW-107:P
MT41K256M16TW-107:P - 4Gb DDR3L SDRAM 933MHz | Micron
MT41K256M16TW-107:P β ActiveSpecification Comparison
| Parameter | MT41K256M16TW-107 | MT41K256M16TW-107:P |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $14.10 | $16.00 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Memory Size | 4 Gbit | 4Gbit (256M x 16) |
| Organization | 256M x 16 | β |
| Interface | Parallel | β |
| Clock Frequency | 933 MHz (DDR3L-1866) | 933 MHz |
| Access Time | 20 ns | β |
| Supply Voltage | 1.35 V | 1.35V |
| Data Bus Width | 16 bit | β |
| Package | 96-FBGA (8x14 mm) | 96-FBGA (8x14mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | 0C to +95C (commercial :P grade) | 0Β°C to +95Β°C |
| Auto Self-Refresh | Yes | β |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| Data Mask | Yes | β |
| Write Leveling | Yes | β |
| Dynamic On-Die Termination | Yes | β |
| ZQ Calibration | Yes | β |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | β |
| Data Rate | β | 1866 MT/s |
| I/O Voltage | β | 1.35V |
| CAS Latency | β | 13 |
| tRCD | β | 20 ns |
| tRP | β | 20 ns |
| Burst Length | β | 8 |
| Lead-Free | β | Yes |