MT41K256M16TW-107:P - 4Gb DDR3L SDRAM 933MHz | Micron
MPN: MT41K256M16TW-107:P β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $19.42 | $19.42 |
| 10 | $18.5 | $185.00 |
| 100 | $17.6 | $1,760.00 |
| 500 | $16.8 | $8,400.00 |
| 1,000 | $16 | $16,000.00 |
Drop-in alternatives for MT41K256M16TW-107:P β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
MT41K256M16TW-107IT:P
β Drop-Inπ Reference alternative (not in catalog)
MT41K256M16TW-107AIT:P
β Drop-Inπ Reference alternative (not in catalog)
MT41K256M16HA-125XIT:E
β Drop-Inπ Reference alternative (not in catalog)
K4B4G1646D-BYMA
β Drop-Inπ Reference alternative (not in catalog)
AS4C256M16D3LC-10BCN
β Drop-Inπ Reference alternative (not in catalog)
MT41K256M16TW-107:P Maximum Ratings & Electrical Characteristics
| Memory Type | DDR3L SDRAM |
| Memory Size | 4Gbit (256M x 16) |
| Clock Frequency | 933 MHz |
| Data Rate | 1866 MT/s |
| Supply Voltage | 1.35V |
| I/O Voltage | 1.35V |
| CAS Latency | 13 |
| tRCD | 20 ns |
| tRP | 20 ns |
| Burst Length | 8 |
| Package | 96-FBGA (8x14mm) |
| Operating Temperature | 0Β°C to +95Β°C |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Lead-Free | Yes |
MT41K256M16TW-107:P Pin Configuration
| Pin A1 | VDD β Power supply (1.35V) |
| Pin A2 | DQ0 β Data input/output 0 |
| Pin A3 | DQ1 β Data input/output 1 |
| Pin A4 | VSS β Ground |
| Pin B1 | DQ2 β Data input/output 2 |
| Pin B2 | DQ3 β Data input/output 3 |
| Pin B3 | VDDQ β I/O power supply (1.35V) |
| Pin B4 | DQ4 β Data input/output 4 |
| Pin C1 | DQ5 β Data input/output 5 |
| Pin C2 | DQ6 β Data input/output 6 |
| Pin C3 | DQ7 β Data input/output 7 |
| Pin C4 | VSS β Ground |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
MT41K256M16TW-107:P is suitable for 6 applications: High-Performance Computing, Networking Equipment, Industrial Automation, Embedded Systems, Consumer Electronics, Automotive Infotainment.
High-Performance Computing
The MT41K256M16TW-107:P provides 4Gbit of DDR3L memory at 1866 MT/s, making it ideal for servers and workstations where high bandwidth and low power are critical. Its 1.35V operation reduces thermal load, enabling denser memory configurations. The 96-FBGA package allows compact PCB layouts, and the 16-bit data bus simplifies routing in multi-rank designs. With a CAS latency of 13, it balances speed and latency for compute-intensive workloads.
Recommended
Networking Equipment
In routers and switches, the MT41K256M16TW-107:P offers high-speed packet buffering with 1866 MT/s data rate and low latency. Its auto self-refresh and write leveling features ensure reliable operation in high-traffic environments. The 1.35V supply reduces power consumption in always-on network devices. The 96-FBGA package is suitable for space-constrained line cards, and the 16-bit interface simplifies connection to network processors.
Recommended
Industrial Automation
The MT41K256M16TW-107:P operates from 0Β°C to +95Β°C, making it suitable for industrial control systems. Its robust design includes dynamic ODT and ZQ calibration for signal integrity in noisy environments. The 4Gbit density supports large data logging and real-time processing. The 1.35V operation reduces heat generation in sealed enclosures, and the 96-FBGA package withstands vibration in factory settings.
Recommended
Embedded Systems
For embedded applications, the MT41K256M16TW-107:P provides a balance of performance and power efficiency. Its 1.35V supply is ideal for battery-powered devices, and the 4Gbit capacity supports complex applications like image processing. The 96-FBGA package is compact, and the 16-bit bus reduces pin count, simplifying PCB design. Auto self-refresh extends battery life in standby modes.
Recommended
Consumer Electronics
In consumer devices like smart TVs and set-top boxes, the MT41K256M16TW-107:P delivers high bandwidth for smooth video playback and multitasking. Its low voltage reduces heat, enabling slim designs. The 96-FBGA package is suitable for compact PCBs, and the 1866 MT/s data rate supports 4K video streams. Write leveling ensures reliable operation in high-speed interfaces.
Recommended
Automotive Infotainment
The MT41K256M16TW-107:P is used in automotive infotainment systems where reliability and temperature range are critical. While not AEC-Q100 qualified, the industrial temperature variant (MT41K256M16TW-107IT:P) is available for -40Β°C to +95Β°C operation. The 4Gbit density supports navigation and multimedia, and the 1.35V supply reduces power in vehicle electrical systems. The 96-FBGA package withstands vibration.
Recommended
Recommended Products Summary
Engineering reference data for MT41K256M16TW-107:P β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MT41K256M16TW-107IT:P | MT41K256M16TW-107AIT:P | K4B4G1646D-BYMA |
|---|---|---|---|---|
| Package | 96-FBGA (8x14mm) | 96-FBGA (8x14mm) | 96-FBGA (8x14mm) | 96-FBGA (8x14mm) |
| Brand | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics |
| Memory Size | 4Gbit | 4Gbit | 4Gbit | 4Gbit |
| Data Rate | 1866 MT/s | 1866 MT/s | 1866 MT/s | 1866 MT/s |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Operating Temperature | 0Β°C to +95Β°C | -40Β°C to +95Β°C | -40Β°C to +95Β°C | 0Β°C to +95Β°C |
| CAS Latency | 13 | 13 | 13 | 13 |
| AEC-Q100 | No | No | Yes | No |
Key Differentiators
- Higher data rate (1866 MT/s) compared to MT41K256M16HA-125XIT:E (1600 MT/s) (vs MT41K256M16HA-125XIT:E)
- Lower voltage (1.35V) compared to standard DDR3 (1.5V) (vs Standard DDR3 parts)
- Industrial temperature grade available (MT41K256M16TW-107IT:P) (vs K4B4G1646D-BYMA)
Design Notes
The MT41K256M16TW-107:P requires a stable 1.35V supply. Use low-ESR ceramic capacitors (0.1uF and 1uF) placed close to each VDD and VDDQ pin to minimize voltage ripple. Ensure the power plane has low impedance across the frequency range of interest.
Follow the layout guidelines in the Micron datasheet for DDR3L routing. Match trace lengths for DQ, DQS, and address/control signals to maintain signal integrity. Use controlled impedance traces (typically 40-60 ohms) and provide proper termination for address/control lines.
The device operates up to +95Β°C, but ensure adequate airflow or heatsinking in high-power systems. The 1.35V supply reduces power dissipation, but in dense memory arrays, thermal vias under the FBGA package can help dissipate heat.
Compliance Information
RoHS compliant per JLCPCB listing. Lead-free per Micron. Not AEC-Q100 qualified for standard part; automotive grade available as MT41K256M16TW-107AIT:P.
