MT47H32M16NF-25E:H vs MT47H64M16NF-25E Comparison

Detailed side-by-side comparison of MT47H32M16NF-25E:H by Micron Technology and MT47H64M16NF-25E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT47H32M16NF-25E:H MT47H32M16NF-25E:H - 512Mb DDR2 SDRAM 400MHz FBGA-84 | Micron

MT47H32M16NF-25E:H - 512Mb DDR2 SDRAM 400MHz FBGA-84 | Micron

MT47H32M16NF-25E:H ✓ Active
Micron Technology
MT47H64M16NF-25E MT47H64M16NF-25E - 1Gb DDR2 SDRAM 400MHz x16 | Micron

MT47H64M16NF-25E - 1Gb DDR2 SDRAM 400MHz x16 | Micron

MT47H64M16NF-25E ✓ Active

Specification Comparison

Parameter MT47H32M16NF-25E:H MT47H64M16NF-25E
Brand Micron Technology Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $7.73 $4.65
Memory Type DDR2 SDRAM DDR2 SDRAM
Density 512 Mbit —
Organization 32M x 16 64M x 16
Clock Frequency 400 MHz 400 MHz
Output Jitter 400 ps —
Supply Voltage 1.8 V —
Interface Parallel —
Package 84-FBGA (8 x 12.5 mm) 84-FBGA (8 mm x 12.5 mm)
Speed Grade -25E -25E
Operating Temperature (commercial :H variant) [DATA_NEEDED: operating temperature range] —
Operating Temperature (IT variant) -40C to +95C —
On-Die Termination (ODT) Yes —
Auto Precharge Yes —
Data Mask Function Yes —
Mounting Type Surface Mount Surface Mount (BGA)
RoHS Status Compliant (:H lead-free suffix) —
FBGA Code D9SBV —
Memory Size — 1 Gbit
Memory Interface — Parallel
Data Rate — DDR2-800 (400 ps)
Number of Banks — 8 banks
Prefetch Architecture — 4n-bit
VDD Supply Voltage — 1.8 V +/-0.1 V
VDDQ Supply Voltage — 1.8 V +/-0.1 V
I/O Interface Standard — SSTL_18-compatible (JEDEC 1.8V)
Features — Differential DQS, RDQS duplicate output strobe, DM data mask, auto precharge, dynamic ODT
Operating Temperature — -40C to +95C (IT: industrial)
Part Status — Production

Datasheets & Resources

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