MT53E2G32D4DE-046 WT:A vs MT53E1G32D2FW-046 WT:B Comparison
Detailed side-by-side comparison of MT53E2G32D4DE-046 WT:A by Micron Technology and MT53E1G32D2FW-046 WT:B by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT53E2G32D4DE-046 WT:A - 64Gb LPDDR4X SDRAM 2G×32 | Micron
MT53E2G32D4DE-046 WT:A ✓ ActiveMicron Technology
MT53E1G32D2FW-046 WT:B - 32Gb LPDDR4 SDRAM | Micron
MT53E1G32D2FW-046 WT:B ✓ ActiveSpecification Comparison
| Parameter | MT53E2G32D4DE-046 WT:A | MT53E1G32D2FW-046 WT:B |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $47.85 | $98.44 |
| Memory Type | Mobile LPDDR4X SDRAM (volatile) | Volatile, Mobile LPDDR4 SDRAM (LPDRAM) |
| Density | 64 Gbit | — |
| Organization | 2G × 32 bit | 1G x 32 |
| Speed Grade | -046 (2133 MHz tCK) | — |
| Clock Frequency | 2.133 GHz | — |
| Access Time (tCK) | 3.5 ns | — |
| Data Rate | 4266 MT/s (DDR, dual-edge) | — |
| Supply Voltage (VDD1/VDD2/VDDQ) | 1.06 V to 1.17 V (VDDQ 0.6 V typical, HSUL_12) | — |
| Interface | Parallel command/address; HSUL_12 data | — |
| Package | 200-ball TFBGA (10 × 14.5 mm) | 200-ball TFBGA (10 mm x 14.5 mm) |
| Ball Pitch | 1.0 mm | — |
| Operating Temperature | -25 °C to +85 °C | -25C to +85C |
| Device Configuration | Dual-rank / dual-channel x32 | — |
| Write Cycle Time (typical) | 18 ns | — |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL-3 (per JEDEC J-STD-020) | — |
| RoHS Status | Compliant | Compliant |
| Memory Capacity | — | 32 Gbit (4 GB) |
| Interface / Bus Width | — | Parallel, 32-bit |
| Clock Frequency (max) | — | 2.133 GHz (2133 MHz) |
| Data Rate (per pin) | — | 4266 MT/s |
| Clock Access Time (tCK) | — | 3.5 ns |
| Speed Bin | — | -046 |
| Supply Voltage VDD2 | — | 1.1 V |
| Supply Voltage VDDQ | — | 1.1 V (LPDDR4X) / 1.8 V (LPDDR4) |
| Die Configuration | — | Dual-Die Package (DDP) |
| On-Die Features | — | Auto precharge, Data mask, ZQ calibration, Write leveling, Built-in temperature sensor, Asynchronous reset |