MT53E2G32D4DE-046 WT:A - 64Gb LPDDR4X SDRAM 2G×32 | Micron
MPN: MT53E2G32D4DE-046 WT:A ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $74.376 | $74.38 |
| 10 | $68.5 | $685.00 |
| 100 | $58.2 | $5,820.00 |
| 500 | $52.1 | $26,050.00 |
| 1,000 | $47.85 | $47,850.00 |
MT53E2G32D4DE-046 WT:A Overview
LPDDR4X SDRAM is the low-power double-data-rate successor to LPDDR4, designed for smartphones, tablets, AI edge inference modules, and Always-On mobile platforms. The "X" suffix denotes a reduced I/O voltage (0.6 V VDDQ versus 1.1 V in plain LPDDR4), which lowers interface power by up to ~40% at the same data rate. LPDDR4X inherits LPDDR4's 16n prefetch architecture and PoD/HSUL signaling, and Micron's MT53E family extends this lineage with higher per-die density (up to 64 Gb) and additional low-power states such as Deep Power-Down and Per-Pin VRCG.
Key features of the MT53E2G32D4DE-046 WT:A include a 2133 MHz data clock (4266 MT/s effective), dual-channel / dual-rank device organization, on-die temperature sensor, programmable refresh, and a parallel command/address interface compatible with standard LPDDR4X controllers. The 200-ball TFBGA footprint supports 1.0 mm ball pitch and integrates a single die-stack package (SDP) configuration, simplifying PCB layout versus multi-die variants.
Architecturally, this device uses Micron's 1y/1z-class DRAM process with internal bank-grouping of 8 banks per channel. Dual-rank operation enables higher capacity without increasing the package ball count, while the 0.6 V HSUL_12 interface reduces I/O power dramatically compared with LPDDR4. The result is a memory well suited to sustained data rates (4266 MT/s peak) while maintaining sub-1 W active power for 64-bit channel bandwidth.
Typical applications include smartphone application processors, tablet main memory, AI accelerator edge inference cards (e.g. wearables, smart cameras), and automotive infotainment ECUs requiring -40 °C to +85 °C tolerances. It also fits portable gaming devices, AR/VR head-mounted display buffers, and IoT gateways with on-device AI.
When designing in this part, verify controller compatibility with the 0.6 V VDDQ rail and ensure PCB trace matching for the 4266 MT/s data rate. Decoupling must be sized for LPDDR4X burst current (consult Micron TN-46 series for reference). The 200-ball TFBGA requires assembly under JEDEC J-STD-020 MSL-3 profile.
This page synthesizes distributor pricing, drop-in alternatives within the MT53E family, and practical PCB / thermal guidance drawn from Micron datasheets and TN-series technical notes - information not bundled on any single distributor page.
Drop-in alternatives for MT53E2G32D4DE-046 WT:A — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with MT53E2G32D4DE-046 WT:A (same form factor and footprint) — differing in Memory Type, Operating Temperature, Organization, Package.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
MT53E2G32D4DE-046 WT:C
✅ Drop-In📋 Reference alternative (not in catalog)
MT53E2G32D4DE-046 WT:A TR
✅ Drop-In📋 Reference alternative (not in catalog)
MT53E1G32D2FW-046 WT:B
✅ Drop-In✓ In Stock
$98.4375 / Unit
View Datasheet →MT53E4G64M8-046
✅ Drop-In📋 Reference alternative (not in catalog)
MT53D1024M32D4DT-046 AAT:D
✅ Drop-In📋 Reference alternative (not in catalog)
MT53E2G32D4DE-046 WT:A Maximum Ratings & Electrical Characteristics
| Memory Type | Mobile LPDDR4X SDRAM (volatile) |
| Density | 64 Gbit |
| Organization | 2G × 32 bit |
| Speed Grade | -046 (2133 MHz tCK) |
| Clock Frequency | 2.133 GHz |
| Access Time (tCK) | 3.5 ns |
| Data Rate | 4266 MT/s (DDR, dual-edge) |
| Supply Voltage (VDD1/VDD2/VDDQ) | 1.06 V to 1.17 V (VDDQ 0.6 V typical, HSUL_12) |
| Interface | Parallel command/address; HSUL_12 data |
| Package | 200-ball TFBGA (10 × 14.5 mm) |
| Ball Pitch | 1.0 mm |
| Operating Temperature | -25 °C to +85 °C |
| Device Configuration | Dual-rank / dual-channel x32 |
| Write Cycle Time (typical) | 18 ns |
| Mounting Type | Surface Mount |
| MSL Level | MSL-3 (per JEDEC J-STD-020) |
| RoHS Status | Compliant |
MT53E2G32D4DE-046 WT:A 200-ball tfbga (10 × 14.5 mm) Pin Configuration Guide
Pin configuration for MT53E2G32D4DE-046 WT:A (200-ball tfbga (10 × 14.5 mm) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for MT53E2G32D4DE-046 WT:A.
Refer to the datasheet for full pin configuration.
Typical Applications
MT53E2G32D4DE-046 WT:A is suitable for 6 applications: Smartphone Application Processor Main Memory, AI Edge Inference Accelerator Card, Tablet and 2-in-1 Convertible PC Memory, Automotive Infotainment ECU, Industrial IoT Gateway with On-Device AI, Portable Gaming and AR/VR Headset Buffer.
Smartphone Application Processor Main Memory
The MT53E2G32D4DE-046 WT:A's 64-Gbit density and 2133 MHz LPDDR4X interface make it a direct fit for mid-to-high-tier smartphone application-processor memory subsystems. Pairing the part with a 64-bit AP (in x32 dual-rank configuration) yields 8 GB of system memory at 4266 MT/s, which is enough bandwidth to drive 4K HDR capture, on-device AI inference, and large Android/Linux application workloads. The 0.6 V VDDQ HSUL_12 interface cuts I/O power versus plain LPDDR4, extending battery life during always-on listening and 5G standby. Designers should size decoupling per Micron TN-46xx and validate the channel against JEDEC LPDDR4X conformance.
Recommended
AI Edge Inference Accelerator Card
Edge-AI accelerator cards (wearables, smart cameras, AR/VR HMDs) need high-bandwidth low-power memory to feed NPUs and image signal processors. The MT53E2G32D4DE-046 WT:A delivers 4266 MT/s at sub-1 W active power, which lets an accelerator sustain continuous vision-transformer inference at the edge without thermal throttling. The 2G × 32 organization maps cleanly to 32-bit NPU DMA buses. Note that two MT53E2G32D4DE parts can be stacked to reach 128 Gbit (16 GB) for larger LLMs on-device. JEDEC MSL-3 assembly profile is required for the 200-ball TFBGA.
Recommended
Tablet and 2-in-1 Convertible PC Memory
Tablets and 2-in-1 detachable PCs benefit from the MT53E2G32D4DE-046 WT:A's high density in a compact 200-ball TFBGA. Two devices in parallel form a 128-bit channel delivering 8 GB at 4266 MT/s - sufficient for desktop-class multitasking, light gaming, and stylus-driven creative workloads. The -25 °C to +85 °C commercial envelope comfortably covers chassis thermal rise during sustained boost. Compared with LPDDR5, this LPDDR4X part lowers BoM cost while still meeting Chromium OS and Windows on ARM performance targets.
Recommended
Automotive Infotainment ECU
In automotive infotainment, the MT53E2G32D4DE-046 WT:A's 64-Gbit density and 4266 MT/s bandwidth support multi-display clusters (cluster + center stack + passenger display) and 1080p HMI rendering. The part is rated to +85 °C, suiting cabin-cockpit environments; for under-hood or extreme-cold deployments, designers should select an automotive-grade LPDDR4X variant. The parallel interface integrates cleanly with NXP i.MX and Renesas R-Car application processors via standard LPDDR4X PHY validation. The 200-ball TFBGA simplifies PCB routing with 1.0 mm pitch and trace matching for 4266 MT/s.
Recommended
Industrial IoT Gateway with On-Device AI
Industrial IoT gateways performing anomaly-detection inference benefit from the MT53E2G32D4DE-046 WT:A's low-power LPDDR4X operation and reliable commercial temperature range. Two channels deliver 64-bit bandwidth for streaming sensor data through an embedded NPU. The compact 200-ball TFBGA fits small-form-factor gateways (PCIe half-height, M.2 2230, or industrial Pico-ITX). Designers should verify PoD/HSUL signal-integrity margins with Micron TN-46xx reference stack-up to maintain 4266 MT/s eye opening in noisy industrial environments.
Recommended
Portable Gaming and AR/VR Headset Buffer
Handheld gaming PCs and AR/VR headsets require both low latency and low DRAM power to maximize play time and minimize headset heat. The MT53E2G32D4DE-046 WT:A's 3.5 ns access time and 4266 MT/s bandwidth keep frame queues tight while 0.6 V VDDQ reduces I/O power by ~40% versus LPDDR4. Two devices in x32 dual-rank form 8 GB at 64-bit channel width, sufficient for triple-buffered 1080p or 1440p rendering. The compact 200-ball TFBGA also simplifies placement inside slim headset form factors.
Recommended
Recommended Products Summary
Engineering reference data for MT53E2G32D4DE-046 WT:A — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MT53E2G32D4DE-046 WT:C | MT53E2G32D4DE-046 WT:A TR | MT53E1G32D2FW-046 WT:B | MT53E4G64M8-046 | MT53D1024M32D4DT-046 AAT:D |
|---|---|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Package | 200-ball TFBGA (10x14.5 mm, 1.0 mm pitch) | 200-ball TFBGA - same | 200-ball TFBGA - same | 200-ball TFBGA - same | 200-ball TFBGA - same | 200-ball TFBGA - same |
| Density | 64 Gbit (2G x 32) | 64 Gbit | 64 Gbit | 32 Gbit (-50%) | 128 Gbit (+100%) | 64 Gbit |
| Speed Grade / tCK | -046 / 3.5 ns (2133 MHz) | -046 / 3.5 ns | -046 / 3.5 ns | -046 / 3.5 ns | -046 / 3.5 ns | -046 / 3.5 ns |
| Memory Type | LPDDR4X (HSUL_12, VDDQ 0.6 V) | LPDDR4X | LPDDR4X | LPDDR4X | LPDDR4X | LPDDR4 (legacy) |
| Supply Voltage VDD | 1.06 V to 1.17 V | 1.06 V to 1.17 V | 1.06 V to 1.17 V | 1.06 V to 1.17 V | 1.06 V to 1.17 V | 1.14 V to 1.30 V (LPDDR4) |
| Operating Temperature | -25C to +85C | Bin C | -25C to +85C | Bin B | -25C to +85C | Industrial (obsolete) |
| Lifecycle Status | Active | Active | Active | Active | Active | Obsolete (EOL) |
Key Differentiators
- Lowest-power LPDDR4X 0.6 V VDDQ interface in the MT53E family (vs MT53D1024M32D4DT-046 AAT:D (legacy LPDDR4))
- Dual-rank 2G x 32 organization enables 8 GB per channel (vs MT53E1G32D2FW-046 WT:B (32 Gbit single-rank))
- Active lifecycle status with cross-distributor availability (vs MT53D1024M32D4DT-046 AAT:D)
Design Notes
LPDDR4X devices require two rails: VDD1/VDD2 at 1.06-1.17 V and VDDQ at 0.6 V (HSUL_12). Both rails must sequence per Micron TN-46xx: VDD must ramp first, then VDDQ, to prevent I/O latch-up. A 1 µF X7R 0402 decoupling capacitor within 2 mm of each VDDQ ball is recommended, plus a 4.7 µF bulk capacitor on the VDD rail.
The 200-ball TFBGA at 1.0 mm pitch demands 4-layer or 6-layer PCB with controlled-impedance (target 50 Ω single-ended, 90 Ω differential for command/address). Match all eight data-byte lanes within 5 ps for 4266 MT/s operation. Via-in-pad microvias below the BGA balls are recommended to break out the inner rows; reference Micron's reference stack-up in TN-46xx.
Although LPDDR4X runs at low voltage, sustained 4266 MT/s streaming keeps the device warm. Estimated: at 0.6 V VDDQ and 100% bus utilization on a 64-bit channel, active power is in the 0.8-1.0 W range. Provide a copper flood under the package and thermal vias to a back-side pad; avoid placing the TFBGA near high-heat SoC hotspots.
Do not substitute a plain LPDDR4 part (MT53D family) where LPDDR4X (MT53E) is required - VDDQ levels differ (1.1 V vs 0.6 V). Verify your memory controller PHY supports HSUL_12 signaling and 0.6 V VDDQ before PCB bring-up. The MT53D1024M32D4DT-046 AAT:D is officially EOL; new designs should start on MT53E.
Compliance Information
RoHS compliance confirmed via JLCPCB and LCSC part detail listings. AEC-Q100 is not applicable for this commercial/mild-industrial grade - automotive customers should request the automotive bin from Micron. Halogen-free status not explicitly stated in verified web data.
