MW7IC18100NR1 vs MW7IC2040NR1 Comparison

Detailed side-by-side comparison of MW7IC18100NR1 by NXP Semiconductors and MW7IC2040NR1 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

NXP Semiconductors
MW7IC18100NR1 MW7IC18100NR1 - 100W RF LDMOS 1.8-2.05GHz PA TO-270 | NXP

MW7IC18100NR1 - 100W RF LDMOS 1.8-2.05GHz PA TO-270 | NXP

MW7IC18100NR1 ✓ Active
NXP Semiconductors
MW7IC2040NR1 MW7IC2040NR1 - 4W RF LDMOS Wideband PA | NXP | Cellular BTS

MW7IC2040NR1 - 4W RF LDMOS Wideband PA | NXP | Cellular BTS

MW7IC2040NR1 ✓ Active

Specification Comparison

Parameter MW7IC18100NR1 MW7IC2040NR1
Brand NXP Semiconductors NXP Semiconductors
Category RF Amplifiers RF Amplifiers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $61.20 $24.20
Product Type RF LDMOS Wideband Integrated Power Amplifier —
Frequency Range 1.805 GHz to 2.05 GHz —
Output Power (CW, typical) 100 W (50 dBm) —
Power Gain (typical) 30 dB —
P1dB (typical) 25 W (44 dBm) CW —
Supply Voltage (VDD) 24 V to 32 V (28 V typical) —
Supply Current (typical) 1.18 A —
RF Modulation Support GSM, GSM EDGE, CDMA, W-CDMA —
VSWR Ruggedness 5:1 stable into mismatch —
Spurious (100 mW to 5 W CW) Below -60 dBc —
Package / Case TO-270 WB-14 (Case 1618-02), plastic, flat leads TO-270 WBL-16 (TO-270-16 Variant, Flat Leads), plastic over-mold surface-mount
Mounting Type Surface Mount (gull-wing flat leads) Surface Mount (PCB solderable with bottom drain ground plane)
Lead Finish e3 (matte tin) —
Operating Temperature -40C to +85C (case) -40 C to +85 C (industrial base-station operating ambient; per Freescale/NXP LDMOS module family)
Body Material Plastic / Epoxy —
RoHS Status Compliant Compliant (per NXP product family)
Manufacturer — NXP Semiconductors (formerly Freescale / Motorola Semiconductor)
Technology — RF LDMOS (Laterally Diffused MOSFET)
RF Type — General Purpose / Wideband Integrated Power Amplifier
Function — Two-stage integrated power amplifier with on-chip matching
Frequency Range (Application) — 1805 MHz to 1990 MHz (covers 1805-1880 MHz DCS/PCS and 1930-1990 MHz UMTS)
Frequency Range (Characterization) — 100 MHz to 1 GHz
Supply Voltage (Vdd) — 24 V to 32 V (nominal 28 V)
Maximum Supply Voltage — 32 V
Quiescent Supply Current (Idq) — 75 mA
Small-Signal Gain — 23.5 dB
Output Power (avg, W-CDMA) — 4 W (typical at rated operating conditions)
Modulation Compatibility — Single W-CDMA, GSM/EDGE, UMTS, LTE, all typical cellular BTS formats
Pin Count — 16
Operating Mode — Class-AB (multi-stage, externally biased)
Lead Configuration — Flat leads (surface-mount)
Packaging Type — Tape & Reel (per part suffix NR1 suffix convention)

Datasheets & Resources

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