MW7IC18100NR1 vs MW7IC2040NR1 Vergleich

Detaillierter Direktvergleich von MW7IC18100NR1 von NXP Semiconductors und MW7IC2040NR1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MW7IC18100NR1 MW7IC18100NR1 - 100W RF LDMOS 1.8-2.05GHz PA TO-270 | NXP

MW7IC18100NR1 - 100W RF LDMOS 1.8-2.05GHz PA TO-270 | NXP

MW7IC18100NR1 ✓ Aktiv
NXP Semiconductors
MW7IC2040NR1 MW7IC2040NR1 - 4W RF LDMOS Wideband PA | NXP | Cellular BTS

MW7IC2040NR1 - 4W RF LDMOS Wideband PA | NXP | Cellular BTS

MW7IC2040NR1 ✓ Aktiv

Spezifikationsvergleich

Parameter MW7IC18100NR1 MW7IC2040NR1
Marke NXP Semiconductors NXP Semiconductors
Kategorie RF Amplifiers RF Amplifiers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $61,20 $24,20
Product Type RF LDMOS Wideband Integrated Power Amplifier —
Frequency Range 1.805 GHz to 2.05 GHz —
Output Power (CW, typical) 100 W (50 dBm) —
Power Gain (typical) 30 dB —
P1dB (typical) 25 W (44 dBm) CW —
Supply Voltage (VDD) 24 V to 32 V (28 V typical) —
Supply Current (typical) 1.18 A —
RF Modulation Support GSM, GSM EDGE, CDMA, W-CDMA —
VSWR Ruggedness 5:1 stable into mismatch —
Spurious (100 mW to 5 W CW) Below -60 dBc —
Gehäuse / Bauform TO-270 WB-14 (Case 1618-02), plastic, flat leads TO-270 WBL-16 (TO-270-16 Variant, Flat Leads), plastic over-mold surface-mount
Montageart Surface Mount (gull-wing flat leads) Surface Mount (PCB solderable with bottom drain ground plane)
Lead Finish e3 (matte tin) —
Betriebstemperatur -40C to +85C (case) -40 C to +85 C (industrial base-station operating ambient; per Freescale/NXP LDMOS module family)
Body Material Plastic / Epoxy —
RoHS-Status Compliant Compliant (per NXP product family)
Manufacturer — NXP Semiconductors (formerly Freescale / Motorola Semiconductor)
Technology — RF LDMOS (Laterally Diffused MOSFET)
RF Type — General Purpose / Wideband Integrated Power Amplifier
Funktion — Two-stage integrated power amplifier with on-chip matching
Frequency Range (Application) — 1805 MHz to 1990 MHz (covers 1805-1880 MHz DCS/PCS and 1930-1990 MHz UMTS)
Frequency Range (Characterization) — 100 MHz to 1 GHz
Supply Voltage (Vdd) — 24 V to 32 V (nominal 28 V)
Maximum Supply Voltage — 32 V
Quiescent Supply Current (Idq) — 75 mA
Small-Signal Gain — 23.5 dB
Output Power (avg, W-CDMA) — 4 W (typical at rated operating conditions)
Modulation Compatibility — Single W-CDMA, GSM/EDGE, UMTS, LTE, all typical cellular BTS formats
Pin-Anzahl — 16
Operating Mode — Class-AB (multi-stage, externally biased)
Lead Configuration — Flat leads (surface-mount)
Packaging Type — Tape & Reel (per part suffix NR1 suffix convention)

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