MW7IC18100NR1 vs MW7IC2040NR1 Comparación
Comparación detallada lado a lado de MW7IC18100NR1 por NXP Semiconductors y MW7IC2040NR1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MW7IC2040NR1 - 4W RF LDMOS Wideband PA | NXP | Cellular BTS
MW7IC2040NR1 ✓ ActivoComparación de especificaciones
| Parámetro | MW7IC18100NR1 | MW7IC2040NR1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | RF Amplifiers | RF Amplifiers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $61,20 | $24,20 |
| Product Type | RF LDMOS Wideband Integrated Power Amplifier | — |
| Frequency Range | 1.805 GHz to 2.05 GHz | — |
| Output Power (CW, typical) | 100 W (50 dBm) | — |
| Power Gain (typical) | 30 dB | — |
| P1dB (typical) | 25 W (44 dBm) CW | — |
| Supply Voltage (VDD) | 24 V to 32 V (28 V typical) | — |
| Supply Current (typical) | 1.18 A | — |
| RF Modulation Support | GSM, GSM EDGE, CDMA, W-CDMA | — |
| VSWR Ruggedness | 5:1 stable into mismatch | — |
| Spurious (100 mW to 5 W CW) | Below -60 dBc | — |
| Encapsulado / Carcasa | TO-270 WB-14 (Case 1618-02), plastic, flat leads | TO-270 WBL-16 (TO-270-16 Variant, Flat Leads), plastic over-mold surface-mount |
| Tipo de montaje | Surface Mount (gull-wing flat leads) | Surface Mount (PCB solderable with bottom drain ground plane) |
| Lead Finish | e3 (matte tin) | — |
| Temperatura de funcionamiento | -40C to +85C (case) | -40 C to +85 C (industrial base-station operating ambient; per Freescale/NXP LDMOS module family) |
| Body Material | Plastic / Epoxy | — |
| Estado RoHS | Compliant | Compliant (per NXP product family) |
| Manufacturer | — | NXP Semiconductors (formerly Freescale / Motorola Semiconductor) |
| Technology | — | RF LDMOS (Laterally Diffused MOSFET) |
| RF Type | — | General Purpose / Wideband Integrated Power Amplifier |
| Función | — | Two-stage integrated power amplifier with on-chip matching |
| Frequency Range (Application) | — | 1805 MHz to 1990 MHz (covers 1805-1880 MHz DCS/PCS and 1930-1990 MHz UMTS) |
| Frequency Range (Characterization) | — | 100 MHz to 1 GHz |
| Supply Voltage (Vdd) | — | 24 V to 32 V (nominal 28 V) |
| Maximum Supply Voltage | — | 32 V |
| Quiescent Supply Current (Idq) | — | 75 mA |
| Small-Signal Gain | — | 23.5 dB |
| Output Power (avg, W-CDMA) | — | 4 W (typical at rated operating conditions) |
| Modulation Compatibility | — | Single W-CDMA, GSM/EDGE, UMTS, LTE, all typical cellular BTS formats |
| Recuento de pines | — | 16 |
| Operating Mode | — | Class-AB (multi-stage, externally biased) |
| Lead Configuration | — | Flat leads (surface-mount) |
| Packaging Type | — | Tape & Reel (per part suffix NR1 suffix convention) |