MW7IC2040NR1 vs MD7IC2050NBR1 Comparison
Detailed side-by-side comparison of MW7IC2040NR1 by NXP Semiconductors and MD7IC2050NBR1 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
NXP Semiconductors
MW7IC2040NR1 - 4W RF LDMOS Wideband PA | NXP | Cellular BTS
MW7IC2040NR1 ✓ ActiveNXP Semiconductors
MD7IC2050NBR1 - 10W W-CDMA RF Power Amplifier 1880-2100MHz | NXP
MD7IC2050NBR1 ✓ ActiveSpecification Comparison
| Parameter | MW7IC2040NR1 | MD7IC2050NBR1 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | RF Amplifiers | RF Amplifiers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $24.20 | $22.40 |
| Manufacturer | NXP Semiconductors (formerly Freescale / Motorola Semiconductor) | — |
| Technology | RF LDMOS (Laterally Diffused MOSFET) | — |
| RF Type | General Purpose / Wideband Integrated Power Amplifier | W-CDMA |
| Function | Two-stage integrated power amplifier with on-chip matching | — |
| Frequency Range (Application) | 1805 MHz to 1990 MHz (covers 1805-1880 MHz DCS/PCS and 1930-1990 MHz UMTS) | — |
| Frequency Range (Characterization) | 100 MHz to 1 GHz | — |
| Supply Voltage (Vdd) | 24 V to 32 V (nominal 28 V) | — |
| Maximum Supply Voltage | 32 V | — |
| Quiescent Supply Current (Idq) | 75 mA | — |
| Small-Signal Gain | 23.5 dB | — |
| Output Power (avg, W-CDMA) | 4 W (typical at rated operating conditions) | — |
| Modulation Compatibility | Single W-CDMA, GSM/EDGE, UMTS, LTE, all typical cellular BTS formats | — |
| Package / Case | TO-270 WBL-16 (TO-270-16 Variant, Flat Leads), plastic over-mold surface-mount | — |
| Pin Count | 16 | — |
| Operating Mode | Class-AB (multi-stage, externally biased) | — |
| Lead Configuration | Flat leads (surface-mount) | — |
| Mounting Type | Surface Mount (PCB solderable with bottom drain ground plane) | Surface Mount (flanged lead) |
| Operating Temperature | -40 C to +85 C (industrial base-station operating ambient; per Freescale/NXP LDMOS module family) | [DATA_NEEDED: operating temperature range] |
| Packaging Type | Tape & Reel (per part suffix NR1 suffix convention) | — |
| RoHS Status | Compliant (per NXP product family) | — |
| Frequency Range | — | 1.88 GHz to 2.1 GHz |
| Operating Bandwidth (broader usability) | — | 1750 MHz to 2050 MHz |
| Supply Voltage | — | 28 V |
| Supply Current (quiescent) | — | 230 mA |
| Gain | — | 30.5 dB |
| Output Power (P3dB class, datasheet) | — | [DATA_NEEDED: P3dB output power] |
| Average Output Power (W-CDMA) | — | 10 W average |
| Architecture | — | Multi-stage RF LDMOS integrated power amplifier |
| Input Matching | — | On-chip, 50 ohm, DC blocked |
| Output Matching | — | On-chip, >5 ohm nominal |
| Enable / Disable | — | Integrated (with quiescent current temperature compensation) |
| ESD Protection | — | Integrated |
| Package | — | TO-272 WB-14 (CASE 1618-02, plastic overmold) |
| Maximum Junction / Package Temperature | — | 225 C capable plastic |
| RoHS Compliance | — | Compliant (per manufacturer datasheet) |