MW7IC2040NR1 vs MD7IC2050NBR1 Comparación
Comparación detallada lado a lado de MW7IC2040NR1 por NXP Semiconductors y MD7IC2050NBR1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MW7IC2040NR1 - 4W RF LDMOS Wideband PA | NXP | Cellular BTS
MW7IC2040NR1 ✓ ActivoNXP Semiconductors
MD7IC2050NBR1 - 10W W-CDMA RF Power Amplifier 1880-2100MHz | NXP
MD7IC2050NBR1 ✓ ActivoComparación de especificaciones
| Parámetro | MW7IC2040NR1 | MD7IC2050NBR1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | RF Amplifiers | RF Amplifiers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $24,20 | $22,40 |
| Manufacturer | NXP Semiconductors (formerly Freescale / Motorola Semiconductor) | — |
| Technology | RF LDMOS (Laterally Diffused MOSFET) | — |
| RF Type | General Purpose / Wideband Integrated Power Amplifier | W-CDMA |
| Función | Two-stage integrated power amplifier with on-chip matching | — |
| Frequency Range (Application) | 1805 MHz to 1990 MHz (covers 1805-1880 MHz DCS/PCS and 1930-1990 MHz UMTS) | — |
| Frequency Range (Characterization) | 100 MHz to 1 GHz | — |
| Supply Voltage (Vdd) | 24 V to 32 V (nominal 28 V) | — |
| Maximum Supply Voltage | 32 V | — |
| Quiescent Supply Current (Idq) | 75 mA | — |
| Small-Signal Gain | 23.5 dB | — |
| Output Power (avg, W-CDMA) | 4 W (typical at rated operating conditions) | — |
| Modulation Compatibility | Single W-CDMA, GSM/EDGE, UMTS, LTE, all typical cellular BTS formats | — |
| Encapsulado / Carcasa | TO-270 WBL-16 (TO-270-16 Variant, Flat Leads), plastic over-mold surface-mount | — |
| Recuento de pines | 16 | — |
| Operating Mode | Class-AB (multi-stage, externally biased) | — |
| Lead Configuration | Flat leads (surface-mount) | — |
| Tipo de montaje | Surface Mount (PCB solderable with bottom drain ground plane) | Surface Mount (flanged lead) |
| Temperatura de funcionamiento | -40 C to +85 C (industrial base-station operating ambient; per Freescale/NXP LDMOS module family) | [DATA_NEEDED: operating temperature range] |
| Packaging Type | Tape & Reel (per part suffix NR1 suffix convention) | — |
| Estado RoHS | Compliant (per NXP product family) | — |
| Frequency Range | — | 1.88 GHz to 2.1 GHz |
| Operating Bandwidth (broader usability) | — | 1750 MHz to 2050 MHz |
| Tensión de alimentación | — | 28 V |
| Supply Current (quiescent) | — | 230 mA |
| Gain | — | 30.5 dB |
| Output Power (P3dB class, datasheet) | — | [DATA_NEEDED: P3dB output power] |
| Average Output Power (W-CDMA) | — | 10 W average |
| Architecture | — | Multi-stage RF LDMOS integrated power amplifier |
| Input Matching | — | On-chip, 50 ohm, DC blocked |
| Output Matching | — | On-chip, >5 ohm nominal |
| Enable / Disable | — | Integrated (with quiescent current temperature compensation) |
| ESD Protection | — | Integrated |
| Encapsulado | — | TO-272 WB-14 (CASE 1618-02, plastic overmold) |
| Maximum Junction / Package Temperature | — | 225 C capable plastic |
| RoHS Compliance | — | Compliant (per manufacturer datasheet) |