NT5AD512M16 vs K4A8G165WB-BCTD Comparison
Detailed side-by-side comparison of NT5AD512M16 by Nanya Technology and K4A8G165WB-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WB-BCTD ✓ ActiveSpecification Comparison
| Parameter | NT5AD512M16 | K4A8G165WB-BCTD |
|---|---|---|
| Brand | Nanya Technology | Samsung Electronics |
| Category | Memory ICs | DRAM |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Organization | 512M x 16 | 512M x 16 |
| Total Density | 8 Gbit | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Data Rate | 3200 Mbps (DDR4-3200) | 2666 Mbps |
| Package | 96-ball FBGA | 96FBGA |
| Operating Temperature (Commercial) | 0°C to +95°C | — |
| Operating Temperature (Industrial) | -40°C to +95°C | — |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | Supported (DM per x16 lane) |
| Write Leveling | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | Supported |
| CRC Function | Yes | — |
| RoHS | Compliant | — |
| Density | — | 8 Gb |
| Operating Temperature | — | 0C to +85C |
| Die Generation | — | B-die |
| Mounting Type | — | Surface Mount (BGA) |
| Interface | — | DDR4 (parallel, double data rate) |
| Dynamic On-Die Termination | — | Supported |
| CAS Latency | — | [DATA_NEEDED: CAS Latency] |
| Refresh Rate | — | [DATA_NEEDED: Refresh Rate] |
| RoHS Status | — | Compliant (per JLCPCB listing: ROHS) |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL Level] |