NT5AD512M16 vs K4A8G165WB-BCTD Comparison
Detailed side-by-side comparison of NT5AD512M16 by Nanya Technology and K4A8G165WB-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Nanya Technology
NT5AD512M16
NT5AD512M16 - 8Gb DDR4 SDRAM 512Mx16 | Nanya Technology
NT5AD512M16 β Active
Specification Comparison
| Parameter | NT5AD512M16 | K4A8G165WB-BCTD |
|---|---|---|
| Brand | Nanya Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $73.75 | $37.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Organization | 512M x 16 | 512M x 16 |
| Total Density | 8 Gbit | 8 Gb |
| Supply Voltage (VDD) | 1.2 V | β |
| Data Rate | 3200 Mbps (DDR4-3200) | 2666 Mbps/pin (PC4-2666) |
| Package | 96-ball FBGA | 96-ball FBGA |
| Operating Temperature (Commercial) | 0Β°C to +95Β°C | β |
| Operating Temperature (Industrial) | -40Β°C to +95Β°C | β |
| Auto Self-Refresh | Yes | β |
| Built-in Temperature Sensor | Yes | β |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| Data Mask | Yes | Yes |
| Write Leveling | Yes | β |
| Dynamic On-Chip Termination | Yes | β |
| ZQ Calibration | Yes | Yes |
| CRC Function | Yes | β |
| RoHS | Compliant | Compliant |
| Supply Voltage | β | 1.2 V |
| Operating Temperature | β | 0Β°C to +95Β°C (TC) |
| CAS Latency | β | [DATA_NEEDED: CL value] |
| tRCD | β | [DATA_NEEDED: tRCD value] |
| tRP | β | [DATA_NEEDED: tRP value] |
| Refresh | β | Auto-refresh, self-refresh |
| On-Die Termination | β | Yes (ODT) |