NT5AD512M16A4-HR vs K4A8G165WC-BCRC Comparison
Detailed side-by-side comparison of NT5AD512M16A4-HR by Nanya Technology and K4A8G165WC-BCRC by Samsung Electro-Mechanics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electro-Mechanics
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WC-BCRC ✓ ActiveSpecification Comparison
| Parameter | NT5AD512M16A4-HR | K4A8G165WC-BCRC |
|---|---|---|
| Brand | Nanya Technology | Samsung Electro-Mechanics |
| Category | Memory ICs | EEPROM |
| Lifecycle Status | Active | Active |
| Stock Status | — | In Stock |
| Unit Price (USD) | — | $19.69 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Organization | 512M x 16 | 512M x 16 |
| Density | 8 Gb | — |
| Supply Voltage | 1.2 V | 1.2 V (1.14 V to 1.26 V) |
| Data Rate | 3200 Mbps (PC4-25600) | 2400 Mbps |
| Operating Temperature | 0°C to +95°C | 0 C to +95 C |
| Package | TFBGA-96 | 96-FBGA (TFBGA) |
| Mounting Type | Surface Mount | Surface Mount |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| Data Mask | Yes | — |
| Write Leveling | Yes | — |
| ZQ Calibration | Yes | — |
| Memory Size | — | 8 Gbit |
| Clock Frequency | — | 1333 MHz |
| Interface | — | Parallel, 16-bit DDR |
| Standby Current (Idle) | — | 2 mA |
| Operating Current | — | 64 mA |
| Features | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Die Generation | — | C-die |
| Memory Format | — | DRAM |
| RoHS Status | — | Compliant |