NT5AD512M16A4-HR vs K4A8G165WC-BCRC Comparison
Detailed side-by-side comparison of NT5AD512M16A4-HR by Nanya Technology and K4A8G165WC-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Nanya Technology
NT5AD512M16A4-HR
NT5AD512M16A4-HR - 8Gb DDR4 SDRAM 512Mx16 | Nanya
NT5AD512M16A4-HR β ActiveSamsung Electronics
K4A8G165WC-BCRC
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps | Samsung
K4A8G165WC-BCRC β ActiveSpecification Comparison
| Parameter | NT5AD512M16A4-HR | K4A8G165WC-BCRC |
|---|---|---|
| Brand | Nanya Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $8.10 | $23.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Organization | 512M x 16 | 512M x 16 |
| Density | 8 Gb | 8 Gb |
| Supply Voltage | 1.2 V | β |
| Data Rate | 3200 Mbps (PC4-25600) | 2400 Mbps |
| Operating Temperature | 0Β°C to +95Β°C | 0Β°C to +95Β°C (case) |
| Package | TFBGA-96 | 96-ball FBGA (9mm x 13mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Auto Self-Refresh | Yes | β |
| Built-in Temperature Sensor | Yes | β |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| CRC Function | Yes | β |
| Data Mask | Yes | β |
| Write Leveling | Yes | β |
| ZQ Calibration | Yes | β |
| Supply Voltage (VDD) | β | 1.2 V (1.14V to 1.26V) |
| VPP Voltage | β | 2.5 V |
| Interface | β | 16-bit I/O |
| Banks | β | 16 (4 bank groups) |
| Burst Length | β | 8 (BL8) |
| CAS Latency | β | Programmable (e.g., 16, 17, 18) |
| Refresh | β | Temperature-compensated self-refresh (TCSR) |
| RoHS | β | Compliant |