NT5AD512M16B4-HR vs MT40A512M16TB-062E:J Comparison
Detailed side-by-side comparison of NT5AD512M16B4-HR by Nanya Technology and MT40A512M16TB-062E:J by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Nanya Technology
NT5AD512M16B4-HR
NT5AD512M16B4-HR - 8Gb DDR4 SDRAM 512Mx16 1.2V | Nanya
NT5AD512M16B4-HR β ActiveMicron Technology
MT40A512M16TB-062E:J
MT40A512M16TB-062E:J - 8Gb DDR4 SDRAM 1.6GHz | Micron
MT40A512M16TB-062E:J β ActiveSpecification Comparison
| Parameter | NT5AD512M16B4-HR | MT40A512M16TB-062E:J |
|---|---|---|
| Brand | Nanya Technology | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $43.10 | $8.10 |
| Memory Type | DDR4 SDRAM | SDRAM - DDR4 |
| Density | 8Gb | β |
| Organization | 512M x 16 | β |
| Supply Voltage | 1.2V | β |
| Package | 96-ball TFBGA | 96-FBGA (7.5x13.5 mm) |
| Temperature Range | 0Β°C to +95Β°C | β |
| Data Rate | 3200 Mbps | β |
| Auto Self-Refresh | Yes | β |
| Built-in Temperature Sensor | Yes | β |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| Data Mask | Yes | β |
| Write Leveling | Yes | β |
| Dynamic On-Chip Termination | Yes | β |
| ZQ Calibration | Yes | β |
| CRC Function | Yes | β |
| RoHS | Compliant | β |
| Memory Size | β | 8Gbit (512M x 16) |
| Clock Frequency | β | 1.6 GHz |
| Access Time | β | 19 ns |
| Supply Voltage (VDD/VDDQ) | β | 1.2V Β±60mV |
| VPP Supply Voltage | β | 2.5V (-125mV, +250mV) |
| I/O Type | β | 1.2V pseudo open-drain |
| Refresh Time | β | 64ms at -40Β°C to 85Β°C; 32ms at >85Β°C to 95Β°C; 16ms at >95Β°C |
| Internal Banks (x16) | β | 8 (2 groups of 4 banks each) |
| Prefetch Architecture | β | 8n-bit |
| Operating Temperature Range | β | 0Β°C to 95Β°C |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes |
| Mounting Type | β | Surface Mount |