NT5AD512M16B4-HR - 8Gb DDR4 SDRAM 512Mx16 1.2V | Nanya
MPN: NT5AD512M16B4-HR ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $53.89 | $53.89 |
| 10 | $51.2 | $512.00 |
| 100 | $48.5 | $4,850.00 |
| 500 | $45.8 | $22,900.00 |
| 1,000 | $43.1 | $43,100.00 |
Drop-in alternatives for NT5AD512M16B4-HR — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →NT5AD512M16B4-HR Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Density | 8Gb |
| Organization | 512M x 16 |
| Supply Voltage | 1.2V |
| Package | 96-ball TFBGA |
| Temperature Range | 0°C to +95°C |
| Data Rate | 3200 Mbps |
| Auto Self-Refresh | Yes |
| Built-in Temperature Sensor | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| Write Leveling | Yes |
| Dynamic On-Chip Termination | Yes |
| ZQ Calibration | Yes |
| CRC Function | Yes |
| RoHS | Compliant |
NT5AD512M16B4-HR Pin Configuration
| Pin A1 | VDD — Power supply |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin B1 | VSS — Ground |
| Pin B2 | DQ2 — Data input/output 2 |
| Pin B3 | DQ3 — Data input/output 3 |
| Pin C1 | VDDQ — DQ power supply |
| Pin C2 | DQ4 — Data input/output 4 |
| Pin C3 | DQ5 — Data input/output 5 |
| Pin D1 | VSSQ — DQ ground |
| Pin D2 | DQ6 — Data input/output 6 |
| Pin D3 | DQ7 — Data input/output 7 |
| Pin E1 | DM0 — Data mask 0 |
| Pin E2 | DQS0 — Data strobe 0 |
| Pin E3 | DQS0# — Data strobe 0 complement |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
NT5AD512M16B4-HR is suitable for 6 applications: Networking Equipment, Industrial Computing, Consumer Electronics, Embedded Systems, Data Center and Server, Automotive Infotainment.
Networking Equipment
The NT5AD512M16B4-HR provides high-density, high-bandwidth memory for routers, switches, and network appliances. Its 8Gb capacity and 3200 Mbps data rate support fast packet processing and routing tables. The 1.2V operation reduces power consumption in always-on network devices, while the built-in temperature sensor enables thermal monitoring in compact enclosures. The CRC function enhances data integrity in high-speed interfaces, ensuring reliable packet forwarding in enterprise and carrier-grade equipment.
Recommended
Industrial Computing
In industrial PCs and embedded computing systems, the NT5AD512M16B4-HR offers reliable memory with a 0°C to +95°C temperature range, suitable for factory automation and process control. The 8Gb density supports complex applications like machine vision and real-time data logging. Auto self-refresh and write leveling ensure stable operation in noisy industrial environments. The 96-ball TFBGA package allows compact PCB designs for space-constrained industrial controllers, while the 1.2V supply minimizes heat generation in sealed enclosures.
Recommended
Consumer Electronics
For smart home devices, set-top boxes, and streaming media players, the NT5AD512M16B4-HR delivers high-performance memory at 1.2V, enabling energy-efficient operation. The 8Gb capacity supports smooth video playback and multitasking in consumer applications. Features like auto precharge and dynamic on-chip termination simplify system design, reducing BOM complexity. The compact TFBGA package fits slim device form factors, while the commercial temperature range covers typical home environments, ensuring reliable performance in daily use.
Recommended
Embedded Systems
The NT5AD512M16B4-HR is ideal for embedded systems requiring high memory bandwidth, such as medical devices, point-of-sale terminals, and kiosks. Its 512M x 16 organization provides a wide data bus for efficient data transfer. The built-in temperature sensor and auto self-refresh enhance reliability in embedded applications with varying thermal conditions. The 1.2V operation reduces power consumption, extending battery life in portable embedded devices. The 96-ball TFBGA package supports compact, rugged designs for harsh environments.
Recommended
Data Center and Server
In data center and server applications, the NT5AD512M16B4-HR provides high-density memory for virtualization, cloud computing, and big data analytics. The 8Gb capacity and 3200 Mbps data rate support high-throughput workloads. Features like CRC and ZQ calibration ensure data integrity and signal quality in high-speed server memory channels. The 1.2V supply reduces power consumption in large-scale deployments, lowering operational costs. The industrial temperature range supports reliable operation in data center environments.
Recommended
Automotive Infotainment
The NT5AD512M16B4-HR supports automotive infotainment systems requiring high-bandwidth memory for navigation, multimedia, and driver assistance displays. Its 8Gb density and 1.2V operation enable power-efficient performance in vehicles. The wide temperature range (0°C to +95°C) covers typical automotive cabin conditions. Features like write leveling and dynamic on-chip termination ensure reliable operation in electrically noisy automotive environments. The compact TFBGA package fits space-constrained infotainment modules.
Recommended
Recommended Products Summary
Engineering reference data for NT5AD512M16B4-HR — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | NT5AD512M16C4-HR | MT40A512M16TB-062E | K4A8G165WB-BCWE |
|---|---|---|---|---|
| Package | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA | 96-ball FBGA |
| Brand | Nanya Technology | Nanya Technology | Micron Technology | Samsung Electronics |
| Density | 8Gb | 8Gb | 8Gb | 8Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V |
| Temperature Range | 0°C to +95°C | 0°C to +95°C | [DATA_NEEDED: temperature range] | [DATA_NEEDED: temperature range] |
| Data Rate | 3200 Mbps | 3200 Mbps | 3200 Mbps | [DATA_NEEDED: data rate] |
| CRC Function | Yes | Yes | [DATA_NEEDED: CRC function] | [DATA_NEEDED: CRC function] |
Key Differentiators
- Built-in temperature sensor for thermal management (vs MT40A512M16TB-062E)
- Commercial and industrial temperature range (vs K4A8G165WB-BCWE)
- CRC function for data integrity (vs MT40A512M16TB-062E)
Design Notes
For high-speed DDR4 signals at 3200 Mbps, maintain controlled impedance of 40-50 ohms for DQ/DQS lines and 50 ohms for address/command lines. Keep trace lengths matched within +/- 10 mils for data groups. Place the 96-ball TFBGA package with adequate ground vias under the device to minimize inductance and improve signal integrity.
Decouple the 1.2V VDD and VDDQ supplies with 0.1uF and 1uF ceramic capacitors placed as close to the package balls as possible. Use a dedicated power plane for VDD and VDDQ to reduce noise. The built-in temperature sensor can be used to monitor die temperature and adjust refresh rates for power optimization.
Ensure ZQ calibration is performed after power-up by connecting a 240-ohm resistor to the ZQ pin. Do not leave the ZQ pin floating. Verify that the reset pin is properly asserted during initialization. For write leveling, follow the controller's training sequence to compensate for clock-to-strobe skew, especially in multi-rank configurations.
Compliance Information
RoHS compliance indicated by distributor listings. Other compliance data not explicitly provided.
