NT6AN8T0SA vs MT40A512M16JY-07EAIT:B Comparison

Detailed side-by-side comparison of NT6AN8T0SA by Nanya Technology and MT40A512M16JY-07EAIT:B by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Nanya Technology
NT6AN8T0SA NT6AN8T0SA - 2Gb LPDDR2 SDRAM | Nanya Technology

NT6AN8T0SA - 2Gb LPDDR2 SDRAM | Nanya Technology

NT6AN8T0SA ✓ Active
Micron Technology
MT40A512M16JY-07EAIT:B MT40A512M16JY-07EAIT:B - 8Gb DDR4 SDRAM 512Mx16 | Micron

MT40A512M16JY-07EAIT:B - 8Gb DDR4 SDRAM 512Mx16 | Micron

MT40A512M16JY-07EAIT:B ✓ Active

Specification Comparison

Parameter NT6AN8T0SA MT40A512M16JY-07EAIT:B
Brand Nanya Technology Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.88 $8.10
Memory Type LPDDR2 SDRAM DDR4 SDRAM
Density 2Gb —
Organization 64M x 32 512M x 16
Supply Voltage 1.2V —
I/O Voltage 1.2V —
Data Rate 1066 Mbps (533 MHz) 2666 MT/s
Operating Temperature Range -30°C to +85°C -40°C to +105°C (AIT grade)
Package FBGA 96-FBGA (8x14)
Mounting Type Surface Mount —
RoHS Status Compliant —
Lead-Free Yes —
Refresh Period 64ms at 85°C —
Burst Length 4 or 8 —
On-Die Termination Yes —
DLL Yes —
Memory Size — 8 Gbit
Clock Frequency — 1.33 GHz
Supply Voltage (VDD/VDDQ) — 1.2V ±60mV
VPP Voltage — 2.5V, -125mV, +250mV
Interface — Parallel
Refresh Time — 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C
I/O Type — 1.2V pseudo open-drain
VREFDQ — On-die, internal, adjustable
AEC-Q100 — Qualified (AIT suffix)
RoHS — Compliant

Datasheets & Resources

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