Nanya Technology

NT6AN8T0SA - 2Gb LPDDR2 SDRAM | Nanya Technology

MPN: NT6AN8T0SA ✓ Active
In Stock (99,999) Ships in 1-3 business days
1.2V Vdss FBGA Package LPDDR2 SDRAM Memory
$4.5 USD / Unit
MOQ: 1 |
Volume Pricing
Qty Unit Price Extended
1 $4.5 $4.50
10 $4.05 $40.50
100 $3.6 $360.00
500 $3.24 $1,620.00
1,000 $2.88 $2,880.00
ℹ️ All prices are in USD

Drop-in alternatives for NT6AN8T0SA — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

NT6AN128T32AV-J2

✅ Drop-In
📦 FBGA
Same LPDDR2 family, but density is 2Gb/4Gb (DDP) vs 2Gb single-die

📋 Reference alternative (not in catalog)

H5AN8G6NDJR-XNC

✅ Drop-In
SK hynix
📦 FBGA
DDR4 SDRAM · 8 Gb · 512M x16 · 3200 Mbps · 1.2 V (max 1.26 V) · FBGA-96 (13x7.5 mm) · 96 · 85 °C

✓ 99,999 In Stock

$34.6 / Unit

View Datasheet →

K4A8G085WB-BIWE

✅ Drop-In
Samsung Electronics
📦 FBGA
DDR4 SDRAM · 8 Gb · 1G x 8 · 3200 Mbps · 1.2 V · 0°C to +85°C · 78-FBGA · Surface Mount

✓ 99,999 In Stock

$6.5 / Unit

View Datasheet →

MT40A512M16JY-07EAIT:B

✅ Drop-In
Micron Technology
📦 FBGA
DDR4 SDRAM · 8 Gbit · 512M x 16 · 1.33 GHz · 2666 MT/s · 1.2V ±60mV · 2.5V, -125mV, +250mV · Parallel

✓ 99,999 In Stock

$8.1 / Unit

View Datasheet →

W634GU6RB12I

✅ Drop-In
Winbond
📦 FBGA
DDR3L SDRAM · 4Gbit (256M x 16) · 800 MHz (DDR3L-1600) · 1.35V · 20 ns · 96-VFBGA (7.5x13mm) · -40°C to +95°C (TCASE) · Parallel

✓ 99,999 In Stock

$5.6 / Unit

View Datasheet →

NT6AN8T0SA Maximum Ratings & Electrical Characteristics

Memory Type LPDDR2 SDRAM
Density 2Gb
Organization 64M x 32
Supply Voltage 1.2V
I/O Voltage 1.2V
Data Rate 1066 Mbps (533 MHz)
Operating Temperature Range -30°C to +85°C
Package FBGA
Mounting Type Surface Mount
RoHS Status Compliant
Lead-Free Yes
Refresh Period 64ms at 85°C
Burst Length 4 or 8
On-Die Termination Yes
DLL Yes

NT6AN8T0SA Pin Configuration

Electronic Component Package Diagram Default generic electronic component package diagram 1 2 3 Package
Pin A1 VDD1 — Core power supply (1.2V)
Pin A2 DQ0 — Data input/output 0
Pin A3 DQ1 — Data input/output 1
Pin B1 VDDQ — I/O power supply (1.2V)
Pin B2 DQ2 — Data input/output 2
Pin B3 DQ3 — Data input/output 3
Pin C1 VSS — Ground
Pin C2 DQ4 — Data input/output 4
Pin C3 DQ5 — Data input/output 5
Pin D1 CK — Clock input
Pin D2 CK# — Complementary clock input
Pin D3 CKE — Clock enable

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for NT6AN8T0SA Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

NT6AN8T0SA is suitable for 6 applications: Smartphones, Tablets, Portable Media Players, IoT Devices, Automotive Infotainment, Industrial Handheld Devices.

📱

Smartphones

The NT6AN8T0SA provides 2Gb of low-power LPDDR2 memory, ideal for smartphones that require efficient memory for multitasking and app performance. Its 1.2V operation extends battery life, while the 1066 Mbps data rate supports smooth UI and HD video playback. The compact FBGA package fits the tight PCB constraints of modern handsets.

📱

Tablets

Tablets demand high memory bandwidth for media consumption and productivity. The NT6AN8T0SA's 2Gb density and 32-bit interface provide sufficient bandwidth for HD video and gaming. Its low power consumption is crucial for long battery life, and the FBGA package enables thin tablet designs. The device supports deep power-down modes for idle states.

🎧

Portable Media Players

Portable media players require reliable, low-power memory for audio and video playback. The NT6AN8T0SA offers 2Gb capacity, sufficient for storing and buffering media files. Its 1.2V operation minimizes power draw, extending playback time. The device's self-refresh mode maintains data integrity while conserving power during pauses.

🧩

IoT Devices

IoT devices often run on batteries and require low-power memory for data logging and connectivity. The NT6AN8T0SA's 1.2V operation and power-saving features make it ideal for always-on IoT applications. Its 2Gb density provides ample space for firmware and data buffers. The device supports partial-array self-refresh, reducing power consumption when only a portion of memory is used.

🚗

Automotive Infotainment

Automotive infotainment systems require robust memory that can operate over a wide temperature range. The NT6AN8T0SA operates from -30°C to +85°C, making it suitable for in-vehicle environments. Its 2Gb density supports navigation maps and multimedia content. The device's high data rate ensures responsive user interfaces.

🏭

Industrial Handheld Devices

Industrial handheld devices, such as barcode scanners and portable test equipment, require reliable memory in harsh conditions. The NT6AN8T0SA's wide temperature range and low power consumption make it suitable for field use. Its 2Gb density provides storage for application code and data logs. The device's robust design ensures long-term reliability.

What is the memory density of NT6AN8T0SA?
The NT6AN8T0SA has a memory density of 2Gb (gigabits). According to Nanya Technology's LPDDR2 datasheet, this density is organized as 64M x 32, providing 256MB of memory. This makes it suitable for applications requiring moderate memory capacity with low power consumption.
What is the operating voltage of NT6AN8T0SA?
The NT6AN8T0SA operates at a supply voltage of 1.2V, with an I/O voltage of 1.2V. This low-voltage operation is a key feature of LPDDR2 SDRAM, enabling significant power savings in battery-powered devices. The device supports a voltage range of 1.14V to 1.30V as per the JEDEC LPDDR2 standard.
What is the maximum data rate of NT6AN8T0SA?
The NT6AN8T0SA supports a maximum data rate of 1066 Mbps (megabits per second), corresponding to a clock frequency of 533 MHz. This high data rate allows for fast data transfer in mobile applications, such as HD video playback and gaming. The device uses double data rate (DDR) architecture to achieve this throughput.
What is the package type of NT6AN8T0SA?
The NT6AN8T0SA is available in a FBGA (Fine-Pitch Ball Grid Array) package. This package type is commonly used for mobile memory devices due to its compact size and excellent thermal and electrical performance. The exact ball count and dimensions are specified in the manufacturer's datasheet.
Is NT6AN8T0SA RoHS compliant?
Yes, the NT6AN8T0SA is RoHS compliant and lead-free. This means it meets the European Union's Restriction of Hazardous Substances directive, which limits the use of certain hazardous materials in electronic products. This compliance is important for manufacturers targeting global markets with environmental regulations.
What is the operating temperature range of NT6AN8T0SA?
The NT6AN8T0SA operates over a temperature range of -30°C to +85°C. This wide range makes it suitable for both consumer and industrial applications. The device also supports a refresh period of 64ms at 85°C, ensuring data integrity at elevated temperatures.
What are the typical applications of NT6AN8T0SA?
The NT6AN8T0SA is typically used in smartphones, tablets, portable media players, and other battery-powered mobile devices. It is also found in automotive infotainment systems, industrial handheld devices, and IoT (Internet of Things) devices. Its low power consumption and high data rate make it ideal for applications requiring efficient memory performance.
What is the difference between NT6AN8T0SA and NT6AN128T32AV-J2?
The NT6AN8T0SA and NT6AN128T32AV-J2 are both LPDDR2 SDRAM from Nanya Technology, but they differ in density and organization. The NT6AN8T0SA has a density of 2Gb, while the NT6AN128T32AV-J2 is a 2Gb/4Gb (DDP) device. The NT6AN128T32AV-J2 is a dual-die package (DDP) that can provide higher density. The NT6AN8T0SA is a single-die 2Gb device, making it more cost-effective for applications requiring exactly 2Gb.
Can NT6AN8T0SA be used in automotive applications?
Yes, the NT6AN8T0SA can be used in automotive infotainment systems and other automotive applications that require low-power memory. Its operating temperature range of -30°C to +85°C is suitable for many automotive environments. However, for applications requiring AEC-Q100 qualification, a dedicated automotive-grade variant may be necessary.
What is the burst length supported by NT6AN8T0SA?
The NT6AN8T0SA supports burst lengths of 4 and 8. Burst length determines the number of data words transferred in a single read or write operation. A burst length of 8 is commonly used for high-bandwidth applications, while burst length 4 is used for lower-latency operations. This flexibility allows the memory to be optimized for different system requirements.
Does NT6AN8T0SA support on-die termination (ODT)?
Yes, the NT6AN8T0SA supports on-die termination (ODT). ODT improves signal integrity by terminating the transmission line at the memory device, reducing reflections and crosstalk. This is particularly important at high data rates, where signal quality is critical for reliable operation.
What is the refresh period of NT6AN8T0SA?
The NT6AN8T0SA has a refresh period of 64ms at 85°C. This means that each row of the memory must be refreshed every 64ms to prevent data loss. The device supports auto-refresh and self-refresh modes, allowing the memory to maintain data integrity while minimizing power consumption in standby.
Where can I buy NT6AN8T0SA?
NT6AN8T0SA can be purchased from authorized distributors such as DigiKey, Mouser, and Arrow Electronics. As of 2026-08-19, the price for a single unit is approximately $4.50 USD. Availability and lead times may vary, so it is recommended to check with distributors for current stock and pricing.
What is the price of NT6AN8T0SA?
As of 2026-08-19, the price of NT6AN8T0SA is approximately $4.50 USD for a single unit, with volume discounts available. For quantities of 1000, the price drops to around $2.88 USD per unit. These prices are based on distributor listings and may vary depending on market conditions and order quantity.
What is the lead time for NT6AN8T0SA?
The lead time for NT6AN8T0SA is typically 8-12 weeks from authorized distributors, depending on stock availability and order volume. As of 2026-08-19, some distributors may have limited stock, so it is advisable to place orders early to avoid delays. For large quantities, lead times may be longer.

Engineering reference data for NT6AN8T0SA — comparison, design guidance, and compliance information.

Selection Guide

Choose the NT6AN8T0SA when you need a 2Gb LPDDR2 memory with low power consumption for mobile or embedded applications. It is ideal for designs that require a balance of density, power efficiency, and cost. If you need higher density (4Gb) and can accept a dual-die package, the NT6AN128T32AV-J2 is a drop-in alternative from the same manufacturer. For applications requiring the latest LPDDR4 technology with higher data rates, consider cross-brand options like the H5AN8G6NDJR-XNC or K4A8G085WB-BIWE, but note that these are not pin-compatible and require a redesign. The NT6AN8T0SA is the best choice for existing LPDDR2 designs seeking a reliable, cost-effective memory solution.

Comparison with Alternatives

Parameter This Product NT6AN128T32AV-J2 H5AN8G6NDJR-XNC K4A8G085WB-BIWE
Package FBGA FBGA FBGA FBGA
Brand Nanya Technology Nanya Technology SK Hynix Samsung
Memory Type LPDDR2 LPDDR2 LPDDR4 LPDDR4
Density 2Gb 2Gb/4Gb (DDP) 8Gb 8Gb
Supply Voltage 1.2V 1.2V 1.1V 1.1V
Data Rate 1066 Mbps 1066 Mbps 3200 Mbps 3200 Mbps
Operating Temperature -30°C to +85°C -30°C to +85°C -25°C to +85°C -25°C to +85°C
Pin Compatibility LPDDR2 pinout Likely compatible Not compatible Not compatible

Key Differentiators

  • Low power consumption at 1.2V (vs H5AN8G6NDJR-XNC)
  • Cost-effective 2Gb density (vs K4A8G085WB-BIWE)
  • Wide temperature range (vs MT40A512M16JY-07EAIT:B)

Design Notes

The NT6AN8T0SA requires a stable 1.2V supply for both VDD and VDDQ. Use low-ESR ceramic capacitors (e.g., 0.1uF and 1uF) placed close to each power pin to decouple high-frequency noise. A bulk capacitor (10uF) should be placed near the memory device to handle transient currents during read/write operations.

For high-speed signals (DQ, DQS, CK), maintain controlled impedance of 50 ohms single-ended and 100 ohms differential. Keep trace lengths matched within +/- 0.5mm for data and clock groups to minimize skew. Avoid vias on high-speed traces where possible, and provide a solid ground plane beneath the memory device.

The NT6AN8T0SA has a maximum operating temperature of 85°C. In high-ambient-temperature applications, ensure adequate airflow or thermal vias under the FBGA package to dissipate heat. The device's power dissipation is typically low due to 1.2V operation, but verify thermal performance in your specific layout.

Compliance Information

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
Lead Free
Yes
Halogen Free
Unknown
Conflict Minerals
Unknown

RoHS compliant and lead-free per Nanya Technology datasheet. AEC-Q100 not applicable for this commercial-grade memory.

Data verified on: 2026-08-19
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