NT6AN8T0SA vs MT40A512M16JY-07EAIT:B 对比
详细并排对比 NT6AN8T0SA 出自 Nanya Technology 和 MT40A512M16JY-07EAIT:B 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT40A512M16JY-07EAIT:B - 8Gb DDR4 SDRAM 512Mx16 | Micron
MT40A512M16JY-07EAIT:B ✓ 量产中规格对比
| 参数 | NT6AN8T0SA | MT40A512M16JY-07EAIT:B |
|---|---|---|
| 品牌 | Nanya Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.88 | $8.10 |
| 存储器类型 | LPDDR2 SDRAM | DDR4 SDRAM |
| Density | 2Gb | — |
| 存储组织 | 64M x 32 | 512M x 16 |
| 电源电压 | 1.2V | — |
| I/O Voltage | 1.2V | — |
| 数据速率 | 1066 Mbps (533 MHz) | 2666 MT/s |
| 工作温度范围 | -30°C to +85°C | -40°C to +105°C (AIT grade) |
| 封装 | FBGA | 96-FBGA (8x14) |
| 安装类型 | Surface Mount | — |
| RoHS 状态 | Compliant | — |
| Lead-Free | Yes | — |
| Refresh Period | 64ms at 85°C | — |
| Burst Length | 4 or 8 | — |
| On-Die Termination | Yes | — |
| DLL | Yes | — |
| 存储容量 | — | 8 Gbit |
| Clock Frequency | — | 1.33 GHz |
| Supply Voltage (VDD/VDDQ) | — | 1.2V ±60mV |
| VPP Voltage | — | 2.5V, -125mV, +250mV |
| 接口 | — | Parallel |
| Refresh Time | — | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| I/O Type | — | 1.2V pseudo open-drain |
| VREFDQ | — | On-die, internal, adjustable |
| AEC-Q100 | — | Qualified (AIT suffix) |
| RoHS | — | Compliant |