PDRQL8KCBF12-00 vs K4RAH086VP-BCWM Comparison
Detailed side-by-side comparison of PDRQL8KCBF12-00 by Samsung Electronics and K4RAH086VP-BCWM by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | PDRQL8KCBF12-00 | K4RAH086VP-BCWM |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $18.00 | $0.00 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | — |
| Organization | 2G x 8 | — |
| Data Rate | 7200 MT/s | 5600 Mbps/pin |
| Supply Voltage | 1.1 V | 1.1 V |
| Package | FBGA | [DATA_NEEDED: exact FBGA package code and body size] |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | [DATA_NEEDED: Operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Burst Length | 16 (BL16), burst chop 8 (BC8) | — |
| On-die ECC | Yes | — |
| Refresh | Auto-refresh and self-refresh | — |
| Interface | Pseudo-differential DQ | Parallel |
| Process Technology | 10nm-class | — |
| RoHS Status | Compliant | unknown |
| Lead-Free | Yes | — |
| Memory Size | — | 16 Gb |
| Memory Organization | — | 2G x 8 |
| Technology | — | DRAM DDR5 |
| Memory Format | — | DRAM |
| Volatile / Non-Volatile | — | Volatile |
| Packaging | — | Tray |
| Application Segment | — | Industrial |
| Lifecycle Status | — | Active |
| MSL Level | — | [DATA_NEEDED: moisture sensitivity level] |