RTAX2000S-1CQ352V vs RTAX2000DL-1CQ352B Comparison

Detailed side-by-side comparison of RTAX2000S-1CQ352V by Microchip Technology and RTAX2000DL-1CQ352B by Microchip Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Microchip Technology
RTAX2000S-1CQ352V RTAX2000S-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000S-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000S-1CQ352V ✓ Active
Microchip Technology
RTAX2000DL-1CQ352B RTAX2000DL-1CQ352B - 2M-Gate Rad-Tolerant FPGA, CQFP-352 | Microchip

RTAX2000DL-1CQ352B - 2M-Gate Rad-Tolerant FPGA, CQFP-352 | Microchip

RTAX2000DL-1CQ352B ✓ Active

Specification Comparison

Parameter RTAX2000S-1CQ352V RTAX2000DL-1CQ352B
Brand Microchip Technology Microchip Technology
Category FPGA & CPLD FPGA & CPLD
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.00 $3,420.00
Equivalent System Gates 2,000,000 gates 2000000
Logic Cells 32,256 cells 29568
Configurable Logic Blocks (CLBs) 21,504 CLBs 19712
Process Technology Digital CMOS —
Speed Grade -1 —
Family RTAX-S/SL Radiation-Tolerant FPGAs —
Package CQ352 ceramic QFP, 352 pins CQFP-352 (ceramic quad flat pack)
Mounting Type Surface Mount Surface Mount
Configuration Live at power-up, single-chip Live at power-up (antifuse, single chip)
Embedded Memory Embedded SRAM with built-in FIFO control logic 540 kbits (with optional EDAC protection)
Core Voltage [DATA_NEEDED: core voltage] —
I/O Voltage [DATA_NEEDED: I/O voltage] —
Operating Temperature [DATA_NEEDED: operating temperature range] —
Radiation Tolerance (TID) [DATA_NEEDED: TID rating] —
MSL Level [DATA_NEEDED: moisture sensitivity level] —
RoHS Status [DATA_NEEDED: RoHS status] —
Core Supply Voltage (Nominal) — 1.5 V
Core Supply Voltage Range — 1.425 V to 1.575 V
Maximum Combinatorial Delay — 0.930 ns
DSP Mathblocks (max) — 120
DSP MAC Performance — 125 MHz, 18-bit x 18-bit multiply-accumulate
Technology — CMOS, antifuse (OTP, nonvolatile)
Total Ionizing Dose (Functional) — 300 krad (Si)
Total Ionizing Dose (Parametric) — 200 krad (Si)
Terminal Count — 352
Input / Output Terminals — 166 input, 166 output
Radiation Tolerance Class — Radiation-tolerant (space-flight)

Datasheets & Resources

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