RTAX2000S-1CQ352V vs RTAX2000DL-1CQ352B Vergleich
Detaillierter Direktvergleich von RTAX2000S-1CQ352V von Microchip Technology und RTAX2000DL-1CQ352B von Microchip Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Microchip Technology
RTAX2000S-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000S-1CQ352V ✓ AktivMicrochip Technology
RTAX2000DL-1CQ352B - 2M-Gate Rad-Tolerant FPGA, CQFP-352 | Microchip
RTAX2000DL-1CQ352B ✓ AktivSpezifikationsvergleich
| Parameter | RTAX2000S-1CQ352V | RTAX2000DL-1CQ352B |
|---|---|---|
| Marke | Microchip Technology | Microchip Technology |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $3.420,00 |
| Equivalent System Gates | 2,000,000 gates | 2000000 |
| Logic Cells | 32,256 cells | 29568 |
| Configurable Logic Blocks (CLBs) | 21,504 CLBs | 19712 |
| Process Technology | Digital CMOS | — |
| Speed Grade | -1 | — |
| Family | RTAX-S/SL Radiation-Tolerant FPGAs | — |
| Gehäuse | CQ352 ceramic QFP, 352 pins | CQFP-352 (ceramic quad flat pack) |
| Montageart | Surface Mount | Surface Mount |
| Configuration | Live at power-up, single-chip | Live at power-up (antifuse, single chip) |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | 540 kbits (with optional EDAC protection) |
| Core Voltage | [DATA_NEEDED: core voltage] | — |
| I/O Voltage | [DATA_NEEDED: I/O voltage] | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | — |
| Radiation Tolerance (TID) | [DATA_NEEDED: TID rating] | — |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | — |
| Core Supply Voltage (Nominal) | — | 1.5 V |
| Core Supply Voltage Range | — | 1.425 V to 1.575 V |
| Maximum Combinatorial Delay | — | 0.930 ns |
| DSP Mathblocks (max) | — | 120 |
| DSP MAC Performance | — | 125 MHz, 18-bit x 18-bit multiply-accumulate |
| Technology | — | CMOS, antifuse (OTP, nonvolatile) |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose (Parametric) | — | 200 krad (Si) |
| Terminal Count | — | 352 |
| Input / Output Terminals | — | 166 input, 166 output |
| Radiation Tolerance Class | — | Radiation-tolerant (space-flight) |