TJ60S06M3LT6L1.NQ vs TJ60S06M3L Comparison

Detailed side-by-side comparison of TJ60S06M3LT6L1.NQ by Toshiba and TJ60S06M3L by Toshiba. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter TJ60S06M3LT6L1.NQ TJ60S06M3L
Brand Toshiba Toshiba
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.52 $0.54
Polarity P-channel P-Channel
Drain-Source Voltage (VDS) -60 V -60 V
Gate-Source Voltage (VGS) +10 V / -20 V —
Continuous Drain Current (ID) at TC=25C -60 A —
Power Dissipation (PD) at TC=25C 100 W —
RDS(on) Max at VGS=-10V 0.0112 ohm —
Input Capacitance (Ciss) 7760 pF 7760 pF (typ.)
FET Type MOSFET P-Channel, Metal Oxide —
Mounting Type Surface Mount Surface Mount
Package DPAK+ (TO-252) DPAK+ (TO-252-3 surface-mount)
Operating Temperature -55C to +150C (Tj) —
Technology Toshiba U-MOS (silicon) U-MOSVI (Trench MOSFET)
MSL Level 1 (unlimited) —
RoHS Status Compliant —
Automotive Qualified Yes (per Toshiba product positioning) —
Continuous Drain Current (ID) — -60 A (Tc)
Power Dissipation (PD) — 100 W (Tc)
On-State Resistance (RDS(on)) — 11.2 mΩ (typ.) at VGS = -10 V
Gate-Source Threshold Voltage (Vth) — -3.0 V (typ.) at VDS = -1 mA
Drain Leakage Current (IDSS) — -10 µA (max) at VDS = -40 V
Operating Temperature Range — [DATA_NEEDED: -55C to +175C assumed, confirm via datasheet]
Lead-Free / RoHS — RoHS compliant
Automotive Grade — AEC-Q101 qualified (LJ suffix: TJ60S06M3L,LXHQ)
Manufacturer — Toshiba Electronic Devices & Storage
Cell Technology — Trench (enhancement mode)

Datasheets & Resources

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