TJ60S06M3LT6L1.NQ vs TJ60S06M3L Comparación
Comparación detallada lado a lado de TJ60S06M3LT6L1.NQ por Toshiba y TJ60S06M3L por Toshiba. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Toshiba
TJ60S06M3L(T6L1,NQ - P-Ch -60V -60A 11.2mOhm DPAK+ MOSFET | Toshiba
TJ60S06M3LT6L1.NQ ✓ ActivoComparación de especificaciones
| Parámetro | TJ60S06M3LT6L1.NQ | TJ60S06M3L |
|---|---|---|
| Marca | Toshiba | Toshiba |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,52 | $0,54 |
| Polarity | P-channel | P-Channel |
| Drain-Source Voltage (VDS) | -60 V | -60 V |
| Gate-Source Voltage (VGS) | +10 V / -20 V | — |
| Continuous Drain Current (ID) at TC=25C | -60 A | — |
| Power Dissipation (PD) at TC=25C | 100 W | — |
| RDS(on) Max at VGS=-10V | 0.0112 ohm | — |
| Input Capacitance (Ciss) | 7760 pF | 7760 pF (typ.) |
| FET Type | MOSFET P-Channel, Metal Oxide | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Encapsulado | DPAK+ (TO-252) | DPAK+ (TO-252-3 surface-mount) |
| Temperatura de funcionamiento | -55C to +150C (Tj) | — |
| Technology | Toshiba U-MOS (silicon) | U-MOSVI (Trench MOSFET) |
| Nivel MSL | 1 (unlimited) | — |
| Estado RoHS | Compliant | — |
| Automotive Qualified | Yes (per Toshiba product positioning) | — |
| Continuous Drain Current (ID) | — | -60 A (Tc) |
| Power Dissipation (PD) | — | 100 W (Tc) |
| On-State Resistance (RDS(on)) | — | 11.2 mΩ (typ.) at VGS = -10 V |
| Gate-Source Threshold Voltage (Vth) | — | -3.0 V (typ.) at VDS = -1 mA |
| Drain Leakage Current (IDSS) | — | -10 µA (max) at VDS = -40 V |
| Rango de temperatura de funcionamiento | — | [DATA_NEEDED: -55C to +175C assumed, confirm via datasheet] |
| Lead-Free / RoHS | — | RoHS compliant |
| Automotive Grade | — | AEC-Q101 qualified (LJ suffix: TJ60S06M3L,LXHQ) |
| Manufacturer | — | Toshiba Electronic Devices & Storage |
| Cell Technology | — | Trench (enhancement mode) |