TLP183(GR) vs TLP183(GB-TPL,E Comparison

Detailed side-by-side comparison of TLP183(GR) by Toshiba and TLP183(GB-TPL,E by Toshiba. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter TLP183(GR) TLP183(GB-TPL,E
Brand Toshiba Toshiba
Category Optocouplers Optocouplers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.20 $0.09
Output Type Phototransistor (DC input, transistor output) —
Number of Channels 1 1
Isolation Voltage 3750 Vrms (minimum) —
Current Transfer Ratio (CTR) 50% minimum @ IF=0.5 mA, VCE=5 V (GR bin: 100-300% @ IF=5 mA) —
Collector-Emitter Voltage (Vceo) 80 V minimum —
Emitter-Collector Voltage (VECO) 6 V minimum —
Collector Current 50 mA maximum —
Forward Current (IF) 50 mA maximum —
Forward Voltage (VF) [DATA_NEEDED: typical VF @ IF=10 mA] —
Switching Time (tR, tF) 2 us typical —
Operating Temperature -55C to +125C —
Package SO6 (4-pin surface mount) 6-SOP (4-lead SO6), surface mount
Mounting Type Surface Mount Surface Mount (SMT)
MSL Level [DATA_NEEDED: MSL rating] —
RoHS Status Compliant RoHS compatible
CTR Bin GR —
Product Type — Phototransistor Output Optocoupler
Isolation Voltage (rms) — 3750 Vrms
CTR Rank — GB (100% to 600% at IF=5 mA, VCE=5 V)
Forward Current (IF) max — 50 mA
Reverse Voltage (VR) max — 5 V
Collector-Emitter Voltage (VCEO) max — 80 V
Emitter-Base Voltage (VEBO) max — 7 V
Collector Current (IC) max — 50 mA
Operating Temperature Range — -55°C to +125°C
Input LED Type — GaAs infrared emitting diode
Output Transistor Type — Silicon NPN phototransistor
Packaging — Tape and Reel (TPL suffix)
Applications — PLC, AC Adapter, I/O Interface, Office Machine

Datasheets & Resources

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