W25M512JVEIQ vs AT45DB041D-SU Comparison

Detailed side-by-side comparison of W25M512JVEIQ by Winbond and AT45DB041D-SU by Renesas Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Renesas Electronics
AT45DB041D-SU AT45DB041D-SU - 4Mbit SPI DataFlash 66MHz 8-SOIC | Renesas

AT45DB041D-SU - 4Mbit SPI DataFlash 66MHz 8-SOIC | Renesas

AT45DB041D-SU ✓ Active

Specification Comparison

Parameter W25M512JVEIQ AT45DB041D-SU
Brand Winbond Renesas Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.64 $0.92
Memory Type FLASH - NOR Memory IC (Multichip Package) DataFLASH NOR
Memory Size 512 Mbit (64 MB) —
Organization 64M x 8 2,048 pages x 264 bytes (binary) or 256 bytes (standard)
Interface SPI, Dual SPI, Quad SPI SPI, RapidS (SPI modes 0 and 3)
Max Clock Frequency 104 MHz —
Operating Voltage 3V / 3.3V —
Access Time 7 ns —
Sector Size 4KB Uniform Sector —
Package 8-WSON (8mm x 6mm) with exposed pad 8-pin SOIC (150 mil, EIAJ)
Mounting Type Surface Mount Surface Mount
Operating Temperature [DATA_NEEDED: Operating Temperature range] [DATA_NEEDED: operating temperature range]
Program/Erase Endurance [DATA_NEEDED: Program/Erase cycles] —
Data Retention [DATA_NEEDED: Data retention] 20 years minimum
Write Protect Hardware /WP pin —
Hold Pin /HOLD supported —
RoHS Status [DATA_NEEDED: RoHS status] Compliant
MSL Level [DATA_NEEDED: Moisture Sensitivity Level] —
Memory Format — FLASH
Density — 4 Mbit (4,325,376 bits)
Maximum Clock Frequency — 66 MHz
Supply Voltage — 2.7 V to 3.6 V
SRAM Data Buffers — 2 x 264 bytes
Page Program Time — [DATA_NEEDED: page program time]
Endurance — 100,000 program/erase cycles per page
Security Register — 128 bytes
Lead-Free — Yes

Datasheets & Resources

Browse All Products Create BOM Request Quote