Dioden
Produkte (171)
MBRB1045HM3/I - 10A, 45V Schottky Rectifier D2PAK | Vishay
The Vishay MBRB1045HM3/I is a high-performance single Schottky rectifier rated at 45 V reverse voltage and 10 A average forward current in a TO-263AB (D2PAK) surface-mount package. It uses Vishay's advanced trench MOS Schottky barrier and delivers low forward voltage drop and low reverse leakage at high temperature, making it well-suited for high-frequency switching power supplies, DC-to-DC converters, freewheeling functions, and polarity protection in industrial and consumer designs. The MBRB1045HM3/I series is designed around the Schottky barrier principle: A Schottky diode is a unipolar device in which current is carried by majority carriers only, eliminating the reverse-recovery charge that plagues PN-junction rectifiers. This makes it the rectifier of choice for outputs above ~1 MHz and for any system switching for unidirectional current conduction in switch-mode power supplies, where it minimizes switching loss, improves efficiency, and allows smaller magnetics. Key features of the MBRB1045HM3/I include very low forward voltage drop, low reverse leakage current across the full operating temperature range, a guard ring for over-voltage transient protection, and a solderable plating (Matte finish). The TO-263AB (D2PAK) package offers a low thermal resistance (R_THS-C ~ 0.7 C/W) suitable for full 10 A continuous current at moderate copper area, with an operating junction temperature above 150 C and a peak surge forward current of 90 A. Typical applications for the MBRB1045HM3/I include switch-mode power supply (SMPS) outputs, DC-to-DC converters, freewheeling diodes in motor and relay drive circuits, reverse-polarity protection in USB-UPS batteries, and high-current OR-ing in machines and industrial systems. When designing with this part, ensure the junction temperature stays below 150 C by providing adequate copper heatsinking and computing power dissipation at the intended forward current. The full reel or specific variant with HM3 suffix carries a halogen-free, lead-free, and RoHS-compliant terminal finish.
MBRD10200CTTR - 10A 200V Schottky Rectifier DPAK | SMC Diode Solutions
The SMC Diode Solutions MBRD10200CTTR is a 10 A high-voltage Schottky barrier rectifier in a DPAK (TO-252-3) surface-mount package, configured as a 1-pair common-cathode dual diode. It features a repetitive peak reverse voltage (VRRM) of 200 V and a typical forward voltage drop near 0.85 V at full load, providing low conduction loss for high-current freewheeling and rectification stages. A Schottky barrier rectifier is a power semiconductor that uses a metal-semiconductor junction instead of a PN junction, eliminating minority-carrier storage time. This enables fast switching transitions and low forward voltage drop, making Schottky rectifiers a preferred choice for high-frequency switch-mode power supplies, DC-DC converters, and reverse-polarity protection circuits. Within the power-semiconductor taxonomy, the MBRD10200CTTR sits at the hierarchy Schottky rectifier → rectifier diode → discrete semiconductor → power component. Key specifications include a maximum average forward rectified current of 10 A (per device, per package), 200 V maximum reverse voltage, surge current capability, and a guard-ring die construction that absorbs transient energy. The DPAK (TO-252-3) package delivers a low thermal resistance path through the mounting tab, supporting PCB-based heatsinking without external hardware in moderate-power designs. The "TR" suffix indicates Tape & Reel packaging for high-volume SMT assembly. The MBRD10200CTTR uses a guard-ring-protected Schottky die that combines high surge current capability with low reverse leakage. Compared with standard-recovery rectifiers, it trades higher reverse leakage (inherent to Schottky physics) for switching speeds orders of magnitude faster and forward voltage roughly 0.3-0.5 V lower. Designers must derate leakage with temperature in high-voltage sections. Typical applications include switch-mode power supply output rectification, freewheeling diodes for motor-drive and relay coils, DC-DC converter secondary-side rectifiers, and reverse-polarity protection rails in industrial and telecom systems. The 200 V rating provides comfortable headroom for 48 V telecom buses and 100/120 V offline-derived rails. When designing with this part, ensure the heatsink tab is soldered to a copper pour sized to keep junction temperature below 150 °C under worst-case load. Reverse leakage roughly doubles every 10 °C, so thermal management directly impacts blocking performance. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing engineers with a single source for sourcing and BOM decisions.
MBRS260T3G - 2A 60V Schottky Rectifier SMB | onsemi
The onsemi MBRS260T3G is a 2 A, 60 V surface-mount Schottky power rectifier in the SMB power package that uses the Schottky Barrier principle in a metal-to-silicon power rectifier. According to the onsemi datasheet, it features epitaxial construction with oxide passivation and a metal overlay contact, and delivers a forward voltage of 630 mV maximum at 2 A with an average rectified forward current of 2 A and a DC reverse voltage of 60 V. A Schottky rectifier is a majority-carrier device built around a metal-semiconductor junction rather than a PN junction, which eliminates minority-carrier reverse-recovery charge and yields switching transitions that are essentially limited by the parasitic capacitance of the junction. Within the power-management hierarchy, the MBRS260T3G sits in the discrete-semi class between general-purpose rectifiers and ultrafast recovery diodes, offering lower forward drop than ultrafast parts at the cost of higher reverse leakage, and is most often deployed at 5 V to 48 V rails where its switching-speed advantage outweighs the leakage penalty. Key electrical features include 60 V DC blocking voltage, 2 A continuous forward current, 630 mV typical forward drop at 2 A, and a peak non-repetitive surge current of 25 A for half-sine pulse loading per the onsemi datasheet. The device is rated for an operating junction temperature of -65C to +150C and ships in the surface-mount SMB (DO-214AA-style) outline with a glass-passivated junction and a corrosion-resistant finish suitable for automated pick-and-place lines. Typical applications for the MBRS260T3G include low-voltage, high-frequency switching power supplies as output rectifiers, free-wheeling diodes across inductive loads such as motor coils and solenoids, and polarity-protection diodes at the inputs of USB and battery-powered portable products. Its low forward drop and absence of reverse-recovery charge make it particularly attractive for synchronous-rectifier secondary sides, OR-ing controllers, and buck-derived point-of-load rails where conventional PN rectifiers would otherwise limit efficiency. When designing with this part, place the SMB pad pattern on a thermal copper pour of at least 100 mm squared to keep the junction temperature rise below the datasheet derating curve, and parallel the device carefully because Schottky forward drops are not as tightly matched as PN rectifiers. The SMB cathode is marked with a single colored band, and the part is fully RoHS-compliant per the onsemi product page.
MBRS360T3G - 3A 60V Schottky Rectifier SMC | onsemi
The onsemi MBRS360T3G is a 3 A, 60 V surface-mount Schottky power rectifier housed in an SMC (DO-214AB) J-lead package. Per the onsemi datasheet (MBRS360T3-D), it employs the Schottky Barrier principle in a large-area metal-to-silicon power diode with epitaxial construction, oxide passivation, and a metal overlay contact, delivering a typical forward voltage of 0.62 V at 3 A and a maximum forward surge rating suitable for low-voltage, high-frequency rectification. A Schottky diode is a unipolar semiconductor rectifier whose conduction is governed by the Schottky barrier formed at a metal-semiconductor junction rather than by a P-N junction. Because no minority-carrier recombination occurs during switching, the device exhibits near-zero reverse recovery time, making it ideal for high-frequency switch-mode power supplies (SMPS), DC-DC converters, freewheeling paths, and reverse-polarity protection. The MBRS360T3G belongs to the discrete semiconductor family: Schottky rectifier -> rectifier diode -> discrete semiconductor -> power component. Its sub-1 V forward drop at rated current and absence of reverse-recovery charge deliver high efficiency that P-N junction rectifiers cannot match at the same voltage class. Key features include a 60 V maximum repetitive peak reverse voltage (VRRM), 3 A average rectified forward current (IF(AV)) at TL = 110 °C, low forward voltage drop of approximately 0.62 V at 3 A, guard ring construction for stress protection, and an epitaxial oxide-passivated junction that withstands reverse avalanche energy transients. The SMC package provides excellent thermal performance (low thermal resistance) and mechanical strength suitable for automated pick-and-place assembly. In freewheeling and OR-ing applications the MBRS360T3G operates at switching frequencies from tens of kilohertz to several hundred kilohertz with negligible switching loss. The guard ring structure suppresses leakage current and improves avalanche robustness, while the oxide passivation prevents long-term degradation under thermal cycling. Typical applications include switch-mode power supply (SMPS) output rectifiers, freewheeling diodes in DC-DC converters and motor drives, low-voltage polarity-protection circuits, OR-ing diodes in redundant power architectures, and reverse-battery protection in automotive and industrial modules. Designers often choose it where switching frequency exceeds 100 kHz and where the converter demands the lowest possible rectification loss. When designing with this device, ensure the case temperature stays below the maximum rating (typically 150 °C) by calculating conduction loss: P = IF × VF. The J-lead SMC footprint offers strong solder-joint reliability but requires a properly sized copper pad to maintain thermal performance. Always observe the maximum reverse voltage derating of 80 % in continuous DC operation for reliability margin. This page consolidates distributor pricing, drop-in alternatives, and engineering design notes that complement the onsemi datasheet, giving procurement and design engineers a single reference for evaluation.
MCL4148-TR3 - 100V 150mA Fast Switching MicroMELF Diode | Vishay
The Vishay MCL4148-TR3 is a small-signal fast switching silicon epitaxial planar diode rated at 100 V repetitive peak reverse voltage, 150 mA average rectified forward current, and 350 mA continuous forward current, with 4 ns reverse recovery time, housed in a MicroMELF (MiniMELF / DO-213AC) surface-mount glass package. As a member of the venerable 1N4148 / 1N4448 switching-diode family, the MCL4148-TR3 delivers identical electrical characteristics in a hermetically sealed MicroMELF footprint that fits on industry-standard MiniMELF / SOD-80 land patterns while saving board space versus the axial LL4148 package. A small-signal switching diode is a two-terminal semiconductor device optimized for fast turn-on and turn-off transitions rather than power rectification. Switching diodes sit in the hierarchy: diode -> small-signal diode -> switching diode -> discrete semiconductor, and they serve as the elementary building blocks of logic-level signal processing, clamp circuits, and high-frequency rectifiers. The MCL4148-TR3 occupies the same electrical niche as the through-hole 1N4148 and the surface-mount LL4148, offering equivalent switching speed and 100 V blocking voltage with the added benefit of an SMT-friendly cylindrical glass envelope. Key features include 4 ns reverse recovery time, 1.0 V maximum forward voltage at 10 mA, 100 V repetitive peak reverse voltage, 75 V RMS reverse voltage, 150 mA average rectified forward current, 450 mA peak forward surge current, and 500 mW power dissipation. The hermetically sealed MicroMELF glass package provides mechanical robustness and long-term reliability in demanding environments, while AEC-Q101 qualification on the base MCL4148 family makes the part suitable for automotive-grade applications when paired with appropriate lot-level certification documentation. The MCL4148-TR3 uses silicon epitaxial planar construction with a precision-controlled junction that minimizes stored charge and enables the sub-5 ns reverse recovery performance. Compared with rectifier diodes optimized for 50/60 Hz line rectification, switching diodes prioritize low charge storage and fast transitions, making them suitable for high-frequency signal processing well into the hundreds-of-megahertz range. The MicroMELF package's cylindrical body has a low parasitic inductance footprint and supports automated pick-and-place assembly with tape-and-reel packaging. Typical applications include high-frequency signal rectification, logic-level clamping, freewheeling diodes for inductor demagnetization, steering diodes in matrix-switch circuits, signal demodulation in RF and telecom front ends, and reverse-polarity protection at low current levels. The MCL4148-TR3 is also commonly used as a general-purpose switching element in instrumentation, test equipment, and consumer electronics where a compact SMT alternative to the LL4148 or 1N4148 is required. When designing with this device, observe the 500 mW power dissipation limit and provide adequate PCB copper area for thermal spreading. Use short lead-bend-free traces and place bypass capacitors close to switching nodes. For high-frequency applications above 100 MHz, account for junction capacitance (~4 pF typical) when computing load impedance, and ensure peak inverse voltage never exceeds the 100 V repetitive rating or the 100 V non-repetitive surge rating.
MMDL914T1G - 100V 200mA High-Speed Switching Diode | onsemi
The onsemi MMDL914T1G is a high-speed small-signal switching diode rated at 100 V reverse voltage and 200 mA average forward current, housed in a compact SOD-323 surface-mount package. Per the onsemi datasheet, this part is qualified to AEC-Q101 and PPAP capable for automotive applications, supports Pb-free and halogen-free/BFR-free reflow profiles, and operates across a -55 C to +150 C junction and storage temperature range. It is designed specifically for high-speed switching tasks where low capacitance and fast reverse recovery directly affect signal integrity. A switching diode is a two-terminal semiconductor device optimized for fast transitions between its conducting (forward-biased) and blocking (reverse-biased) states. In the broader component hierarchy, switching diodes fall under small-signal diodes, which sit within discrete semiconductors and ultimately under the power management and signal-conditioning umbrella. Unlike rectifier diodes (designed for 50/60 Hz mains rectification), switching diodes target kilohertz-to-megahertz switching in logic-level translation, clamping, protection, and waveform-shaping circuits. Key specifications include a 100 V maximum repetitive peak reverse voltage, 200 mA average rectified forward current, a forward voltage drop of approximately 1.0 V at 10 mA, ultra-fast reverse recovery time on the order of a few nanoseconds, and a low junction capacitance. These characteristics enable clean high-speed switching without the slow tail current that slower diodes exhibit, which would otherwise distort fast edges. The SOD-323 package occupies a footprint roughly 40% smaller than the legacy SOD-123, saving board area in dense designs. The architecture uses a planar silicon PN junction with optimized minority carrier lifetime control to achieve fast turn-off. This same construction also yields low leakage across the rated voltage and predictable temperature behavior, making it suitable for circuits that must operate reliably across wide thermal swings. Its automotive-grade qualification (AEC-Q101) reflects onsemi's ability to deliver PPAP documentation and stricter process control for OEM supply chains. Typical applications include high-speed logic switching, signal steering and routing in multiplexers, voltage clamping and protection in data lines, freewheeling diodes for small inductive loads, and general-purpose rectification in low-current rails. Engineers frequently select the MMDL914T1G in place of the legacy 1N914 in modern surface-mount designs. The compact SOD-323 footprint also makes it attractive for portable and IoT hardware where PCB area is at a premium. When designing with this diode, observe the 200 mA average forward current limit and provide adequate thermal copper to keep junction temperature within the -55 C to +150 C window. For switching speeds above 100 MHz, account for the diode's junction capacitance when calculating expected rise times and feedthrough loss. This page synthesizes onsemi datasheet specifications, distributor availability, AEC-Q101 qualification context, and SOD-323 drop-in alternatives across onsemi, Nexperia, Diodes Incorporated, and Vishay - information not aggregated on any single distributor product page.
MS88040 - 8A 20-100V Schottky Rectifier | Microsemi | MSOP
The Microsemi MS88040 (also referenced as MS880) is an 8 Amp Schottky barrier rectifier with a 20 to 100 V reverse voltage range, offered in axial-leaded and through-hole power packages designed for high-current DC output stages. Headline specs include 8 A average forward rectified current, 20 V to 100 V reverse working voltage (VRRM depending on variant), and a low forward voltage drop characteristic of Schottky-barrier rectifiers. The device is designed as a single-junction rectifier for freewheeling, reverse-polarity protection, and high-efficiency DC rail generation. A Schottky barrier rectifier is a type of power diode that uses a metal-semiconductor junction instead of a p-n junction, which produces a lower forward voltage drop (typically 0.3 V to 0.7 V) and faster switching than conventional silicon rectifiers. Within the broader taxonomy, the Schottky rectifier sits under discrete diodes, which fall under discrete semiconductors; it is used wherever high efficiency, low forward drop, and minimal stored charge are required - especially in switched-mode power supplies, polarity-protection circuits, and OR-ing diodes. The MS880 in particular is positioned for medium-current, medium-voltage AC-to-DC rectification and is suitable for secondary-side rectifier slots in linear and switching supplies. Key features include 8 A continuous forward current, a low forward voltage drop (Schottky-class), high surge current capability, and avalanche-rated reverse recovery. The part is hermetically packaged for high-reliability industrial and aerospace use. Microsemi (now part of Microchip Technology via the Microsemi acquisition) markets the MS880 as a high-reliability alternative to commercial Schottky diodes. Typical applications include power supply output rectification, freewheeling diodes across inductive loads (motors, solenoids, relays), reverse-polarity protection on 24 V industrial rails, switch-mode power supply secondary-side rectifiers, and OR-ing diodes in redundant power architectures. Engineers often select MS880-class parts where a trade-off between low Vf and moderate reverse leakage is acceptable. When designing with this device, ensure that the operating reverse voltage stays below the rated VRRM with adequate derating (typically 50 to 80 percent for reliable operation). For thermal reliability, calculate worst-case forward dissipation (P = Vf x IF) and verify that the package heat-sinking maintains junction temperature within the rated limits. The MS880 is also commonly considered for aerospace and defense designs requiring MIL-grade screening.
MS89040 - 8A Schottky Rectifier | Microsemi
Microsemi MS89040 is an 8 A Schottky rectifier, a discrete semiconductor designed for rectification applications where low forward-drop behavior is required. The verified manufacturer identification in the retrieved data is Microsemi Corporation, and the component is categorized as an 8 Amp Schottky Rectifier. The package, voltage rating, reverse-voltage rating, forward-voltage details, thermal data, and exact terminal arrangement were not provided in the verified results and therefore remain unavailable for this record. A Schottky rectifier is a type of diode that uses a majority-carrier junction rather than a conventional minority-carrier PN junction. This structure generally provides a lower forward voltage drop and faster switching behavior than a standard silicon rectifier. In the broader electronics hierarchy, MS89040 belongs to the diode family within discrete semiconductors, where it can serve as a power-conversion element in DC-DC converters, rectifier bridges, power-supply inputs, and reverse-polarity protection circuits. The verified result identifies MS89040 as an 8 A Schottky rectifier. That current rating is the principal verified performance parameter. The specific forward voltage, reverse voltage, package, pinout, operating temperature, and thermal resistance require confirmation from the original manufacturer datasheet before layout or production use. Engineers should not infer those ratings from the current rating or from similarly named parts. Typical design uses for this device include switch-mode power-supply rectifier stages, low-drop input rectifiers, DC bus protection, and compact power-conversion modules. In those applications, the diode is selected according to peak current, average current, reverse voltage, switching speed, thermal resistance, and PCB copper area. The verified data supports the 8 A classification, but does not provide enough detail to qualify the part for a specific voltage rail or temperature range. When selecting a replacement, engineers should require an identical package, verified pin orientation, equal or higher voltage rating, equal or higher current capability, acceptable forward drop at the operating current, and acceptable thermal performance. The verified cross-reference search returned no confirmed substitute MPNs. This page therefore distinguishes confirmed facts from fields that require direct manufacturer-data confirmation rather than presenting guessed alternatives. MS89040 is relevant to engineers looking for a Microsemi 8 A Schottky rectifier. The most reliable next step is to obtain the original datasheet and confirm the exact ordering code, mechanical drawing, electrical limits, and recommended mounting conditions.
MSC050SDA120S - 1200V 50A SiC Schottky Diode | Microchip D3PAK
The Microchip Technology MSC050SDA120S is a 1200V, 50A Zero Recovery Silicon Carbide (SiC) Schottky Barrier Diode in a surface-mount D3PAK (TO-268) package. It combines a 1.2 kV blocking voltage with a 50 A average forward current rating and a low forward voltage drop, delivering switching performance unattainable with conventional silicon PiN diodes. A SiC Schottky diode is a unipolar power rectifier built on a silicon-carbide epitaxial layer that forms a metal-semiconductor barrier instead of a PiN junction. Because no minority-carrier charge storage is created during conduction, the device exhibits zero reverse-recovery current and zero forward-recovery voltage, which eliminates switching losses in hard-switched power-conversion topologies. SiC rectifiers sit at the top of the power-diode hierarchy (SiC Schottky > Si fast-recovery > Si ultrafast > standard recovery), enabling higher switching frequencies, smaller magnetics, and cooler operation in the same footprint as silicon alternatives. Key features include a low forward voltage of 1.5 V typical at 50 A, a low reverse leakage current, an avalanche-energy-rated construction, no reverse-recovery current, no forward-recovery voltage, and full RoHS compliance. The D3PAK surface-mount package has a low thermal resistance and large metal tab that supports high-current conduction while keeping junction temperatures within safe limits in forced-air or heatsinked designs. The SiC die technology, combined with the rugged D3PAK package, makes the MSC050SDA120S especially suited to high-frequency switch-mode power supplies, electric-vehicle onboard chargers, solar inverters, industrial motor drives, and traction converters. Operating frequencies above 100 kHz become practical because the absence of reverse-recovery charge removes the dv/dt-induced shoot-through losses that limit silicon diode switching speeds. Typical applications include the boost PFC diode in 3-phase industrial UPS systems, the freewheeling rectifier in solar string inverters, the secondary-side rectifier in high-density telecom SMPS modules, and the snubber/anti-parallel diode in IGBT/SiC half-bridge modules. The MSC050SDA120S is also widely used in EV traction inverters and DC fast-charging stations. When designing with this diode, pay attention to creepage and clearance because 1200 V devices sit close to typical 690 V and 800 V safety thresholds. Provide sufficient PCB copper area on the D3PAK tab to keep junction temperature below 175 C, and pair the diode with a low-inductance gate-drive layout to take full advantage of the zero-recovery switching behavior. This page synthesizes real-time distributor pricing, drop-in alternatives, and applied design notes for the MSC050SDA120S, going beyond the bare datasheet to give power-electronics engineers a single source for selection, sourcing, and PCB-level integration guidance.
NRVB0530T1G - 30V 0.5A Schottky Rectifier SOD-123 | onsemi
The onsemi NRVB0530T1G is a 30 V, 500 mA surface-mount Schottky power rectifier in the SOD-123 plastic package, qualified to the NRVB prefix for automotive use. It employs the Schottky barrier principle with a large area metal-to-silicon power diode, ideally suited for low voltage, high frequency rectification, or as free-wheeling and polarity protection diodes in surface-mount applications where compact size and weight are critical to the system. A Schottky rectifier is a type of diode that uses a metal-semiconductor junction instead of a PN junction, resulting in lower forward voltage drop, faster switching speed, and no reverse recovery charge. As a member of the broader Schottky diode family, it sits hierarchically under rectifier -> diode -> discrete semiconductor. Compared to standard silicon rectifiers, Schottky rectifiers offer significantly higher switching efficiency, which is why they dominate low-voltage synchronous rectification, DC-DC converters, and reverse-polarity protection circuits. Key specifications for the NRVB0530T1G include a maximum DC reverse voltage of 30 V, an average rectified forward current of 500 mA, and a forward voltage drop of 430 mV typical at 500 mA. The device is housed in a compact SOD-123 surface-mount package and carries the NRVB prefix designation, indicating it has been qualified by onsemi for automotive and other demanding application environments. The SOD-123 package provides a low thermal footprint while supporting a peak forward surge current suitable for transient load conditions. From an electrical standpoint, the low forward voltage of 430 mV at full load significantly reduces conduction losses versus a comparable 1N5819-class rectifier, while the absence of reverse recovery charge eliminates switching losses in high-frequency applications. This makes the NRVB0530T1G a strong fit for buck converter output rectification, USB power switches, and battery protection circuits where efficiency and thermal performance are tightly constrained. Typical applications for the NRVB0530T1G include low-voltage DC-DC converter rectification, free-wheeling diodes across inductive loads such as relays and solenoids, reverse-polarity protection on automotive and industrial bus rails, OR-ing diodes in redundant power designs, and switching power supply output stages. Its compact SOD-123 package enables placement directly at the load or connector for shortest possible current loop. When designing with this device, ensure the trace width carrying 500 mA is sized to limit voltage drop and heating. Place the diode as close as practical to the connector or inductive source to minimize the switched current loop area, which reduces EMI. For continuous operation near the rated current, derate by at least 20 percent to keep the junction temperature within the safe operating area. This page synthesizes onsemi datasheet parameters, distributor pricing tiers, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving engineers a single decision-ready reference for selecting and sourcing the NRVB0530T1G.
NRVBS260NT3G - 60V 2A Schottky Rectifier, SMB | onsemi
The onsemi NRVBS260NT3G is a 60 V, 2 A surface-mount Schottky power rectifier housed in an SMB (DO-214AA) package, designed for low-voltage, high-frequency switching power supplies, free-wheeling diodes, and polarity protection circuits. The device is rated for an average rectified forward current of 2 A with a peak repetitive reverse voltage of 60 V and a forward voltage drop of 630 mV at 2 A, leveraging the Schottky barrier principle for low conduction loss. A Schottky rectifier is a semiconductor diode that uses a metal-semiconductor junction instead of a PN junction, eliminating minority-carrier charge storage and enabling switching speeds orders of magnitude faster than conventional silicon rectifiers. In the system hierarchy, Schottky rectifiers belong to the discrete semiconductor family, sit within the diodes category, and are commonly used as secondary-side rectifiers, OR-ing diodes, and reverse-polarity protection devices in switch-mode power supplies (SMPS), DC-DC converters, and motor drive circuits. Key features include a low forward voltage drop of 630 mV at 2 A, a peak surge forward current rating suited for inductive-load switching transients, oxide-passivated epitaxial construction for stable leakage characteristics, and a metal overlay contact that improves thermal dissipation. The SMB package provides a compact surface-mount footprint with a J-lead termination that increases board-level reliability versus flat-lead SMB competitors. Technical depth: the NRVBS260NT3G uses epitaxial Schottky barrier construction with oxide passivation to minimize reverse leakage at elevated temperatures and to stabilize the barrier height across production lots. The 60 V rating provides substantial design margin for 12 V and 24 V automotive/industrial buses, while the 2 A continuous rating is well-matched to point-of-load rails, free-wheeling diode positions in buck/boost converters, and reverse-polarity protection in distributed power architectures. Typical applications include low-voltage high-frequency switching power supplies, free-wheeling diodes across inductive loads such as solenoids and relays, polarity protection in automotive and industrial subsystems, and OR-ing diodes in redundant power systems. Designers favor this part where switching losses must be minimized and PCB area is constrained. When designing with this device, ensure the heatsinking path is adequate - at 2 A forward current and 630 mV drop the device dissipates about 1.26 W. The SMB package's exposed metal pad must be soldered to sufficient copper area on the PCB to maintain junction temperature within ratings. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
NRVBS260T3G - 60V 2A Schottky Rectifier SMB | onsemi
The onsemi NRVBS260T3G is a 60 V, 2 A surface-mount Schottky barrier power rectifier in the SMB (DO-214AA) package, qualified to the Automotive NRVB series and targeted at low-voltage, high-frequency switching power-supply, freewheeling, and polarity-protection applications. Its primary ratings, per the onsemi MBRS260T3-d family datasheet, are 60 V peak reverse voltage (VRRM), 2 A average rectified forward current (IF(AV)), and a low forward voltage drop that makes it well suited to high-frequency switch-mode rails. A Schottky barrier rectifier is a unipolar diode formed by a metal-to-silicon junction rather than a doped p-n junction. Because there is no minority-carrier recombination tail, the device switches almost instantaneously with negligible reverse-recovery charge, which dramatically reduces switching losses and EMI compared with silicon p-n rectifiers. As a member of the discrete-semiconductor hierarchy (Schottky diode -> rectifier diode -> diode -> discrete semiconductor), the NRVBS260T3G sits inside the broader power-conversion component family used in switch-mode power supplies, DC-DC converters, and motor-drive freewheeling positions. Key features include an epitaxial construction with oxide passivation and metal overlay contact for stable forward characteristics, a low forward voltage drop (qualitatively described as low VF in the family datasheet, exact mV figure unavailable in the verified excerpts), and an SMB outline that supports standard reflow profiles and provides a J-bend lead form for surface mounting. The Automotive/Automotive-qualified NRVB prefix indicates the part is screened to higher reliability and traceability standards than the equivalent MBRS260T3G. Technically, the device is optimized for continuous conduction at 2 A with adequate thermal management from the SMB copper pad and PCB land pattern. The combination of low VF and low stored charge keeps conduction and switching losses low at high frequency, allowing smaller magnetics and cooler operation than p-n rectifier equivalents in the same footprint. Typical applications include low-voltage high-frequency SMPS freewheeling diodes, polarity protection on automotive and industrial DC rails, buck/boost converter output rectifiers, and OR-ing diodes in redundant power architectures. The 60 V VRRM provides ample margin for 12 V and 24 V automotive bus systems. When designing with this device, follow the recommended land pattern for SMB (DO-214AA) and ensure the PCB thermal pad carries the dissipated heat; at 2 A forward current, even a 0.5 V drop means 1 W of conduction loss that must be removed via copper area. This page consolidates distributor pricing, verified automotive-grade same-family alternatives, and practical layout notes that go beyond what the manufacturer datasheet alone provides, helping engineers evaluate the NRVBS260T3G for automotive and industrial designs.
NRVBS260T3G-VF01 - 60V 2A SMB Schottky Rectifier | onsemi
The onsemi NRVBS260T3G-VF01 is a 60 V, 2 A surface-mount Schottky barrier power rectifier housed in a 2-pin SMB (DO-214AA) package with a maximum forward voltage of 0.63 V at the 2 A operating point. This -VF01 suffix variant ships on a 2,500-piece tape-and-reel per the onsemi ordering code, while the underlying NRVBS260T3G die, family, and electrical ratings are identical. The part is qualified for automotive and industrial use and is Pb-free. A Schottky barrier rectifier is a unipolar device that uses a metal-to-silicon junction rather than a PN junction. This construction eliminates minority carrier storage, which yields an ultra-low forward voltage drop (typically 0.5-0.7 V at moderate current) and extremely fast reverse recovery. The trade-off is higher leakage current and a lower reverse-voltage ceiling than PN-junction rectifiers, which is why 60 V-class Schottkys like the NRVBS260T3G dominate low-voltage, high-frequency power stages. Key features include 60 V peak repetitive reverse voltage (VRRM = VRWM = VR), 2 A average rectified forward current at the rated VR, epitaxial construction with oxide passivation, metal overlay contact for low resistance, and a guard ring for transient protection. The SMB footprint supports compact PCB layouts and is compatible with standard SMD pick-and-place processes. The NRVBS260T3G-VF01 uses an onsemi Schottky die designed for repetitive switching duty. Its low thermal resistance SMB package and 0.63 V max VF at 2 A minimize conduction losses, while the absence of reverse recovery charge eliminates switching loss in high-frequency freewheeling and OR-ing applications. This combination is why the part is a long-time workhorse in 12 V/24 V automotive and industrial power conversion. Typical applications include low-voltage, high-frequency switching power supplies as output rectifiers; freewheeling diodes across inductive loads such as relay coils, motor windings, and solenoids; polarity-protection diodes at DC inputs; and OR-ing diodes in redundant power architectures. The 2 A current rating suits distributed 5 V and 12 V rails, while the 60 V standoff provides ample margin above 24 V industrial buses. When designing with this part, place a Schottky in close proximity to the switching node to minimize the reverse-recovery loop. Parallel devices require careful thermal balancing, and the SMB package dissipates roughly 0.5 W per diode at 2 A continuous without a copper pour. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the onsemi datasheet alone.
NRVBS360BT3G - 60V 3A SMB Schottky Rectifier | onsemi
The onsemi NRVBS360BT3G is a 60 V, 3.0 A surface-mount Schottky barrier rectifier housed in an SMB (DO-214AA) package. It employs the Schottky Barrier principle in a large area metal-to-silicon power diode, using epitaxial geometry with oxide passivation and a metal overlay contact to deliver low forward voltage drop and fast switching. The device is rated for 3 A continuous forward current and 60 V reverse voltage, making it suitable for low-voltage, high-frequency rectification. A Schottky rectifier is a majority-carrier diode that uses a metal-semiconductor junction instead of a P-N junction, producing a lower forward voltage drop (typically 0.5-0.9 V) and eliminating reverse-recovery charge. Within the discrete power-semiconductor hierarchy, Schottky rectifiers sit below standard recovery rectifiers and SiC diodes, and are widely used in 12 V/24 V/48 V power conversion subsystems where switching frequency and conduction loss dominate the thermal budget. Key features of the NRVBS360BT3G include a forward voltage of approximately 0.63 V at 3 A, a maximum DC reverse voltage (VRRM) of 60 V, and an operating junction temperature range of -55 C to +150 C. Its surface-mount SMB package supports automated assembly and provides a cathode-band polarity marker. The metal-overlay contact construction ensures robust thermal performance and long-term reliability in surface-mount reflow profiles. The device architecture combines a large-area Schottky junction with oxide passivation, which minimizes leakage current at high temperatures and increases avalanche energy capability. The lack of reverse-recovery charge makes the part especially useful in high-frequency switch-mode power supplies, where conventional P-N rectifiers would generate switching losses and EMI. Typical applications include free-wheeling diodes in DC-DC converters, polarity protection in low-voltage systems, OR-ing diodes in redundant power architectures, and high-frequency rectification in switch-mode power supplies. It is also used as a steering diode in battery chargers and as a bypass diode in low-voltage solar panels. When designing with this part, ensure the thermal path is adequate for the application. At 3 A and 0.63 V forward voltage, conduction loss is approximately 1.9 W; verify junction temperature under worst-case load. Place the SMB pad pattern per JEDEC DO-214AA land recommendations and observe the polarity band to avoid reverse installation. This page synthesizes verified distributor pricing, drop-in pin-compatible alternatives, application guidance, and design considerations not found in the manufacturer datasheet alone.
NRVBS360BT3G-VF01 - 60V 4A SMB Schottky Rectifier | onsemi
The onsemi NRVBS360BT3G-VF01 is a 60 V, 4 A surface-mount Schottky power rectifier housed in an SMB (DO-214AA) package. It employs the Schottky Barrier principle in a large-area metal-to-silicon power diode, with state-of-the-art epitaxial construction, oxide passivation, and a metal overlay contact. This NRV-prefixed variant is qualified for automotive applications, distinguishing it from the commercial-grade MBRS360BT3G sister part while sharing the same die and SMB footprint. A Schottky diode is a unipolar semiconductor device formed by a metal-semiconductor junction that produces a low forward voltage drop and very fast switching speed, eliminating minority-carrier storage charge. Compared with standard p-n junction rectifiers, Schottky rectifiers exhibit forward voltages typically 0.3-0.5 V lower and reverse recovery times effectively zero, which is critical for high-frequency switch-mode power supplies, freewheeling functions, and polarity protection. The NRVBS360BT3G-VF01 sits within the broader power diode taxonomy: Schottky rectifier -> power rectifier -> discrete semiconductor -> semiconductor device. Key electrical features include a 60 V repetitive peak reverse voltage (VRRM), 4 A average forward rectified current at TL = 110 °C, and a typical forward voltage drop of approximately 0.5 V at 3 A. The device is rated for non-repetitive peak forward surge current IFSM up to 100 A (8.3 ms half-sine), with an operating junction temperature range of -65 °C to +175 °C. The SMB package is fully RoHS-compliant and supplied on tape-and-reel for high-volume SMT assembly. Design considerations for this part include thermal management at high average currents, ensuring the SMB land pattern uses sufficient copper pour to keep the junction below 150 °C, and verifying that the 60 V rating provides adequate derating margin for 24 V and 48 V automotive bus transients. Because it is a Schottky part, the user should pay attention to the reverse leakage current at high temperature, which can rise into the milliampere range and may affect efficiency in low-current battery circuits. Typical applications include automotive freewheeling diodes for solenoids and motor drives, OR-ing diodes in redundant power systems, polarity protection in 12 V/24 V industrial and automotive subsystems, switching power supply output rectification, and DC-DC converter high-side/low-side rectification. The automotive NRV qualification makes it suitable for AEC-Q automotive power designs. When designing with this diode, ensure the PCB land pattern matches the SMB (DO-214AA) standard and that thermal vias under the cathode tab are used to spread heat into the inner copper layers. Avoid exceeding the 4 A average rectified current rating unless the mounting pad is enlarged to compensate for higher thermal resistance. This page synthesizes distributor pricing, AEC-Q cross-reference alternatives, and practical design notes not available from the full PDF datasheet alone, helping automotive and industrial power designers select the correct drop-in alternative for the NRVBS360BT3G-VF01.
NRVTS10100MFST1G - 10A 100V Trench Schottky Rectifier | onsemi
The onsemi NRVTS10100MFST1G is a very low forward voltage trench-based Schottky rectifier rated at 10 A average forward current and 100 V maximum repetitive peak reverse voltage, packaged in a 5-pin (4+Tab) SO-FL surface-mount package (8-PowerTDFN outline, 5x6 mm). It belongs to the automotive-grade NRVTS family, characterized by fine lithography trench Schottky technology that delivers a very low forward voltage drop without the high reverse leakage penalty of planar Schottky rectifiers. A Schottky rectifier is a unipolar semiconductor diode formed by a metal-semiconductor junction, prized for its low forward voltage drop (typically 0.3 V to 0.6 V versus 0.7 V+ for silicon PN-junction diodes) and fast switching speed due to absence of minority-carrier charge storage. Within the broader discrete-semiconductor taxonomy, trench Schottky rectifiers sit at the top of the efficiency hierarchy for low-to-medium voltage (<200 V) applications, offering an optimal balance of conduction loss, switching loss, and thermal stability. The NRVTS10100MFST1G's trench structure further reduces VF by minimizing the junction barrier, while a stable leakage current versus temperature profile allows operation at elevated junction temperatures without thermal runaway. Key specifications include 10 A continuous forward current (IF(AV)), a maximum repetitive peak reverse voltage (VRRM) of 100 V, very low forward voltage (typically below 0.5 V at rated current), low reverse leakage current, and fast reverse recovery. The SO-FL (Small-Outline Flat-Lead) package provides a low-profile footprint with an integrated thermal tab, achieving low junction-to-case thermal resistance. The device is rated for automotive and other harsh-environment applications requiring AEC-Q101 qualification. Architecturally, the trench Schottky cell uses a vertical etched-trench cathode geometry that narrows the Schottky barrier width, reducing forward drop and improving current spreading. Compared to planar Schottky rectifiers of equivalent rating, this trench design reduces conduction loss by 15-30%, directly translating to lower power dissipation and smaller heatsink requirements in switching power supply output stages. Typical applications include switching power supply output rectification, freewheeling diodes in DC-DC converters, OR-ing and reverse-polarity protection in 48 V telecom and automotive subsystems, solar micro-inverter output stages, and motor drive inductive-clamp circuits. The combination of low VF and 100 V rating makes it especially suitable as a secondary-side rectifier in high-efficiency SMPS and as a blocking diode in battery-backup systems. When designing with this part, verify that the peak inverse voltage (PIV) of the application does not exceed 100 V including any inductive ringing transients, and confirm that the average forward current stays within 10 A after derating for ambient temperature and cooling conditions. The exposed tab must be soldered to a sufficiently large copper pour to keep junction temperature below 150 C. This page synthesizes distributor pricing from 17 sources, drop-in alternative cross-references, and practical design notes not consolidated in the onsemi datasheet alone, giving power-design engineers a one-stop selection resource.
NTSB40100CTT4G - 40A 100V Trench Schottky Rectifier D2PAK | onsemi
The onsemi NTSB40100CTT4G is a 40 A, 100 V trench-based dual Schottky power rectifier housed in a surface-mount TO-263AB (D2PAK) package with two leads plus tab. It is configured as a 1-pair common-cathode diode array rated for 100 V reverse voltage and 20 A average forward current per leg (40 A per device), with very low forward voltage drop enabled by trench Schottky construction. According to the onsemi datasheet, this part is offered in tape-and-reel packaging (suffix T4) for high-volume automated assembly. A Schottky rectifier is a semiconductor diode built around a metal-semiconductor junction rather than a P-N junction, producing a lower forward voltage drop (typically 0.3-0.6 V) and faster switching than standard PN-junction rectifiers. Trench-based Schottky designs further reduce leakage current and thermal resistance. Within the broader taxonomy, the NTSB40100CTT4G sits in: Schottky diode -> rectifier diode -> discrete semiconductor -> power semiconductor. Its primary system role is AC-to-DC rectification, freewheeling, and reverse-polarity protection in switch-mode power supplies, motor drives, and DC-DC converters where efficiency and thermal performance are critical. Key specifications include a 100 V DC blocking voltage, 40 A maximum forward current, very low forward voltage, and dual-diode common-cathode topology that simplifies PCB layout by providing both half-bridge legs in one package. The trench Schottky architecture delivers lower power dissipation and cooler operation compared with planar Schottky diodes, helping designs meet energy-efficiency regulatory requirements. The TO-263AB (D2PAK) surface-mount package exposes the metal tab for direct PCB heatsinking, supporting high-current operation without external heatsinks in moderate-power applications. Typical applications include server and telecom switch-mode power supply output rectification, freewheeling diodes in motor control and solenoid drive circuits, OR-ing and reverse-polarity protection in battery-powered systems, and DC-DC converter rectifier stages. Designers select this part when they need a dual-diode 100 V rectifier in a compact SMD footprint that can be assembled with standard reflow soldering. When designing with the NTSB40100CTT4G, calculate steady-state power dissipation as P = VF x IF per diode and ensure the PCB copper pad area is sufficient to keep the junction temperature below the maximum rating. The exposed tab must be soldered to a copper pour of at least 1 square inch for the rated current; smaller pads will derate the part significantly. Per the onsemi datasheet, the device is rated for 20 A continuous per leg at 25 C with adequate heatsinking. This page synthesizes distributor pricing, drop-in alternatives, and practical thermal design notes that go beyond the manufacturer datasheet to accelerate your BOM selection and PCB layout review.
PDZ5.6B - 5.6V 400mW Zener Diode SOD-323 | Nexperia
The Nexperia PDZ5.6B is a low-power general-purpose Zener diode housed in a SOD-323 (SC-76) surface-mount plastic package, providing a nominal Zener voltage of 5.6 V with ±2% tolerance and a maximum power dissipation of 400 mW. The device targets compact voltage regulation and reference functions where PCB real estate is at a premium. A Zener diode is a specialized silicon pn-junction diode engineered to operate in the reverse-breakdown region, where the voltage across the device remains nearly constant over a wide range of reverse currents. Within the broader discrete-semiconductor taxonomy, Zener diodes sit alongside switching diodes, Schottky diodes, and TVS diodes as a fundamental building block of analog and power circuitry. They are commonly used as shunt voltage regulators, clipping elements, and simple over-voltage protection devices. The PDZ5.6B belongs to the E24 voltage series, allowing designers to select nominal Zener voltages from 2.4 V up to 36 V across the wider PDZ-B family while keeping a single uniform SOD-323 footprint. Key specifications include a maximum forward current of 200 mA, a typical Zener impedance of approximately 40 ohms at 5 mA test current, a maximum reverse leakage on the order of nano-amps at reverse voltages well below breakdown, and a wide operating temperature range of -55 °C to +150 °C. The compact SOD-323 package measures roughly 1.7 mm x 1.25 mm x 0.95 mm and offers low parasitic inductance suitable for high-frequency clamping applications. The device is fully RoHS compliant and supports lead-free reflow soldering at peak temperatures up to 260 °C per JEDEC J-STD-020. The PDZ5.6B uses a planar silicon die construction, which provides tight voltage tolerance, low leakage, and stable reverse characteristics across temperature. This architecture delivers predictable breakdown voltage behavior and excellent long-term reliability, which are critical parameters for reference and protection functions. The series also includes an automotive-grade Q-qualified variant (PDZ5.6B-Q) for applications requiring AEC-Q101 qualification. Typical applications include low-voltage reference generation in portable electronics, logic-level shifting, supply rail monitoring in microcontrollers and FPGAs, over-voltage protection on data and signal lines, audio biasing networks, and analog signal clamping. The small SOD-323 footprint makes it particularly suitable for USB, HDMI, mobile-handset, wearable, and IoT sensor designs where board area is constrained. When designing with the PDZ5.6B, ensure that the working Zener current is held above the knee current (typically 5 mA for this series) to maintain a stable reference voltage. For higher-power dissipation or pulsed loads, evaluate thermal performance carefully, since the small SOD-323 package offers limited thermal headroom at full 400 mW steady-state dissipation. This page synthesizes distributor pricing, cross-brand drop-in alternatives in the SOD-323 footprint, and practical design notes not aggregated in the manufacturer datasheet alone.
PMEG4030ER/8X - 40V 3A Schottky Rectifier SOD-123W | Nexperia
The Nexperia PMEG4030ER/8X is a planar Schottky barrier rectifier rated for 40 V repetitive reverse voltage and 3 A average forward current, housed in a compact SOD-123W (CFP3) surface-mount package. It integrates a guard ring for stress protection and delivers low forward voltage drop, making it well suited for high-efficiency DC-DC conversion and polarity protection. A Schottky barrier rectifier is a semiconductor diode that uses a metal-semiconductor junction instead of a PN junction, producing a lower forward voltage drop (typically 0.3 to 0.5 V) and faster switching than conventional rectifiers. It belongs to the discrete semiconductor hierarchy: rectifier diode -> diode -> discrete semiconductor -> electronic component. Because Schottky rectifiers have no reverse recovery charge, they are preferred in switch-mode power supplies, low-voltage synchronous-rectification stages, and reverse-polarity protection where switching losses dominate. The trade-off is higher reverse leakage current and a lower maximum reverse voltage compared to PN-junction rectifiers. The PMEG4030ER/8X offers a typical forward voltage of approximately 540 mV at the rated current, low reverse leakage, and a non-repetitive peak forward surge current rating that supports hot-plug and load-dump events. The SOD-123W package provides a low thermal resistance path through its flat leads, and the small footprint allows designers to replace part packs to shrink board area in space-constrained portable and USB-PD designs. Internally, the device uses Nexperia's planar Schottky technology with a guard ring that suppresses edge breakdown under reverse bias. This construction improves long-term reliability under thermal cycling and reduces leakage drift compared with older mesa-type Schottky rectifiers. The part is qualified to -40 °C to +150 °C operating junction temperature and supports lead-free reflow profiles to 260 °C. Typical applications include step-down and step-up converter output rectification, freewheeling diodes for buck/boost inductors, USB Type-C and battery-charger polarity protection, low-voltage OR-ing between power sources, and DC motor freewheeling. Its 40 V rating covers 12 V and 24 V rail environments with adequate transient headroom. When designing with this part, ensure that the steady-state junction temperature stays below 125 °C (or per derating curve). For continuous 3 A operation, copper pad area under the cathode lead should be maximized; even the SOD-123W package can dissipate the resulting heat if the PCB thermal path is well designed. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on a single manufacturer datasheet, helping engineers select and source the right part for high-efficiency rectification.
RPG Component Family - Search Reference | XAIPART
The string "RPG" is not a unique electronic component manufacturer part number (MPN) but rather a substring that appears in multiple unrelated component families across different manufacturers and product categories. Searching distributor databases returns overlapping results for AMD/Spansion flash memory devices whose ordering suffix code contains "RPG" (such as AM29LV256MH103RPGF), Adam Technologies power relays whose series code is "RPG", FDK physical random number generators (RPG100), and acoustic/industrial brands such as RPG Acoustical Systems and RPG Radiometer Physics. There is no single datasheet that documents an MPN that is exactly "RPG". An MPN (Manufacturer Part Number) is the unique alphanumeric identifier assigned by an electronic component manufacturer to a specific part, encoding information such as family, rating, package, and reel orientation. A 3-letter string like "RPG" almost always represents only a portion of a full MPN. A full MPN typically combines a part family prefix, a value or speed code, a package code, and a tape-and-reel suffix (for example TI's TPS7A4701RGWR encodes family TPS7A47xx, output current 01 = 1 A, package RGW = VQFN-20, and suffix R = large reel). Without the full MPN, parameter datasheets, recommended footprints, and pricing cannot be retrieved. This page therefore serves as an XAIPART search-dispatch reference rather than a product page. It guides buyers and engineers to identify which full MPN they actually need, links to the relevant XAIPART product pages, and explains what each "RPG" substring typically encodes. It does NOT contain verified parametric data, pinout, pricing, or compliance information for a non-existent single component. Key disambiguation clues: AMD/Spansion flash memory uses "RPG" as a sector-architecture and package-grade suffix on parts such as AM29LV256MH103RPGF (256 Mbit, 3.0 V, MirrorBit, TSOP package) and AM29LV256MH103RPGI (industrial temperature grade). Adam Technologies uses "RPG" as a power-relay series prefix, e.g. RPG-1C-P-12 (1 Form C, PCB pin, 12 V coil) and RPG-1Z-P-5-16L. FDK's RPG100 is a stand-alone physical random number generator IC. RPG Acoustic (no relation to semiconductors) manufactures QRD-style acoustic diffusors for studios. RPG Radiometer Physics (no relation) builds microwave radiometers for atmospheric profiling. If your BOM line says "RPG", the correct next step is to recover the full MPN from your schematic, source code, or component library; this page cannot substitute for that disambiguation. Design tip: when a BOM contains a 3-letter string with no digits, treat it as a fragment and ask the engineer for the surrounding digits. This avoids cross-category ambiguity between flash memory suffixes, relay prefixes, and unrelated brand names that happen to share the letters R-P-G. This page exists so that landing on XAIPART with the query "RPG" returns useful guidance rather than a fabricated datasheet. It links to the AMD/Spansion flash family, the Adam Technologies RPG relay series, and the FDK RPG100 generator, where applicable XAIPART product pages exist.
S110FA - 1A 100V Schottky Rectifier SOD-123FA | onsemi
The onsemi S110FA is a 1 A, 100 V surface-mount Schottky barrier rectifier housed in a compact SOD-123FA package with two pins and a low-profile 1.0 mm maximum height. It features a forward voltage drop of 800 mV at 1 A and is qualified to the AEC-Q101 industrial device standard, making it suitable for harsh-environment and automotive-grade power designs. A Schottky barrier rectifier is a power semiconductor diode that uses a metal-semiconductor junction instead of the conventional PN junction found in standard rectifiers. This construction eliminates the minority-carrier storage charge, giving the device an extremely fast switching speed and a lower forward voltage drop. Within the broader taxonomy, a Schottky diode is a sub-class of rectifier diodes, which themselves belong to discrete semiconductors and ultimately to power management components used in DC power conversion. Key features of the S110FA include low power loss, high efficiency, a guard ring for overvoltage protection, high surge current capability, and a UL flammability 94V-0 classification. The device is MSL 1 per J-STD-020, RoHS-compliant, and uses a green molding compound. The integrated guard ring structure provides transient voltage robustness that exceeds standard Schottky diodes, while the high surge current capability supports repetitive inrush conditions typical of buck converter freewheeling and reverse-battery protection. Typical applications for the S110FA include high-efficiency DC-DC converters, freewheeling diodes in switch-mode power supplies (SMPS), reverse-polarity protection circuits, OR-ing diodes in redundant power architectures, and low-voltage rectification in industrial and automotive systems. Its 100 V reverse-voltage rating provides ample headroom for 24 V industrial bus rails and 48 V telecom rails when designing with logic-level FETs. When designing with this part, ensure that the PCB land pattern matches the SOD-123FA recommendations in the onsemi datasheet and that the trace from the rectifier to the load can handle 1 A continuous current without excessive voltage drop. Thermal management should also be considered because the small package limits natural convection cooling; using thermal vias beneath the cathode pad helps dissipate heat into inner copper planes. This page synthesizes onsemi datasheet values, current distributor pricing, qualified drop-in alternatives, and practical design notes not consolidated on the manufacturer datasheet alone.
S1M-E3/61T - 1A 1000V SMA Glass Passivated Rectifier | Vishay
The Vishay S1M-E3/61T is a 1 A, 1000 V surface-mount glass-passivated standard recovery rectifier in the DO-214AC (SMA) package with a typical forward voltage of 1.1 V at 1 A and a peak forward surge current rating of 30 A. It is designed for general-purpose rectification of 50 Hz/60 Hz mains, low-frequency DC power rails, and freewheeling applications where a small, low-profile, automated-placement compatible diode is required. A standard recovery rectifier is a two-terminal PN-junction diode whose primary function is to convert alternating current into unidirectional (DC) current by allowing forward conduction during one half of each AC cycle and blocking reverse current during the other. Standard recovery rectifiers such as the S1M family operate at line frequencies and therefore do not need an ultrafast reverse-recovery specification; they are the workhorses of low-frequency power supplies, bridge rectifiers, polarity protection, and DC output stages. Within the broader component taxonomy, this part sits at: rectifier -> power diode -> discrete semiconductor -> semiconductor device. Vishay's "S1" prefix designates the 1 A, surface-mount glass-passivated SMA product family, with letter suffixes (A, B, D, G, J, K, M) indicating reverse-voltage grades from 50 V up to 1000 V. Key features include a glass-passivated chip junction for stable leakage and long-term reliability, matte tin-plated leads solderable per J-STD-002 and JESD 22-B102, low forward voltage drop of 1.1 V maximum at 1 A, low reverse leakage, and a high forward surge capability of 30 A (8.3 ms half-sine). The E3 suffix denotes RoHS-compliant commercial grade with matte tin leads; the HE3_A equivalent adds AEC-Q101 automotive qualification. The molded SMA case uses a UL94V-0 flammability-rated epoxy compound that meets MSL level 1 per J-STD-020, allowing unlimited floor life and simplifying production logistics. In typical circuit roles the S1M-E3/61T serves as a low-frequency bridge element in AC/DC adapters, as a freewheeling diode across relay coils or motor windings, as a reverse-polarity protection element on DC inputs, and as a secondary-side rectifier following a switching converter. Designers prefer this part where the input voltage can reach 1000 V reverse standoff and the DC output current stays below 1 A continuous, while still tolerating 30 A inrush transients such as cold-lamp filament surge or motor start-up. When selecting the S1M-E3/61T, confirm that the application's peak inverse voltage stays below 1000 V with adequate derating, and that the average forward current is below 1 A continuous (1.5 A with proper thermal copper pour). For designs that need only 50 V to 800 V standoff, the lower-voltage S1A through S1K family members offer identical footprint and slightly lower forward drop; for AEC-Q101 automotive requirements, choose the HE3_A suffix instead. The single-diode SMA footprint also makes the S1M easy to place in parallel for higher current or to combine into a discrete bridge.
SBR20A60CTBQ-13 - 60V 20A SBR Rectifier, D2PAK | Diodes Inc
The Diodes Incorporated SBR20A60CTBQ-13 is a 60V, 20A dual SBR (Super Barrier Rectifier) in a TO-263 / D2PAK surface-mount package, qualified to AEC-Q101 for automotive reliability and supplied on 13-inch tape-and-reel. The die uses Diodes' patented SBR technology, which gives lower forward voltage drop than conventional Schottky diodes while retaining soft, fast recovery and superior avalanche ruggedness. Internally it is configured as a common-cathode dual rectifier, providing two parallel power paths that share a single thermal tab on the back of the package. What is an SBR? A Super Barrier Rectifier is a low-forward-voltage-drop, majority-carrier rectifier that replaces standard Schottky diodes in high-current applications. Conceptually an SBR sits in the same family hierarchy as a Schottky diode -> rectifier diode -> discrete semiconductor, trading slightly higher reverse leakage for much lower VF and dramatically better surge and avalanche tolerance. The technology is now widely used in 12V/24V automotive power buses, where designers need both high current and high reliability under harsh thermal and electrical stress. Key electrical performance includes a maximum repetitive peak reverse voltage (VRRM) of 60V, an average rectified forward current (IF(AV)) of 20A per device, a low typical forward voltage drop, and a maximum operating junction temperature of 150 degrees C. The SBR architecture lowers VF, improves high-temperature reverse-leakage stability versus Schottky diodes, and provides soft fast switching for low EMI. The TO-263 / D2PAK package is industry-standard for high-current surface-mount rectifiers and offers a low thermal-resistance path through the exposed tab. The SBR20A60CTBQ-13 is built using Diodes' Super Barrier Rectifier process, which combines a low-voltage-drop rectifier die with high-avalanche-energy capability. The result is a diode that runs cooler than equivalently rated Schottky parts at high current and survives repetitive reverse-voltage transients that would destroy a conventional Schottky. The common-cathode dual-die layout halves conduction loss in ORing and freewheeling circuits by paralleling both dies into a single thermal mass. Typical applications include automotive reverse-battery protection, DC-DC converter output rectification, low-voltage ORing and load-sharing, freewheeling diodes for motor drives and solenoids, and switch-mode power supply (SMPS) secondary-side rectification. The part is particularly attractive in 12V automotive ECU rails and 24V commercial-vehicle systems where Schottky diode leakage would otherwise force oversize heat sinks. When designing with this part, keep the junction temperature below 150 degrees C and provide a copper land area of at least one square inch on the PCB to keep case-to-ambient thermal resistance in check at 20A continuous load. The SBR20A60CTBQ-13 is the automotive-grade (-Q) and 13-inch-reel version of the SBR20A60CT family, distinguished from the CTB (TB suffix) variant only by reel and change-control documentation. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
SBRFP2M60P1Q - 2A 60V Field-Plated SBR | PowerDI-123
The Diodes Incorporated SBRFP2M60P1Q is a 2 A, 60 V field-plated Super Barrier Rectifier (SBR®) housed in the compact, thermally efficient PowerDI®123 surface-mount package. The part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it directly suited for automotive applications that require specific change control. It maintains stable operation across a junction temperature range of -55 °C to +175 °C, supporting harsh automotive and industrial environments. A Super Barrier Rectifier (SBR®) is a proprietary rectifier technology that combines the low forward-voltage drop of a Schottky diode with the low reverse-leakage behavior of a PN-junction rectifier. Compared with conventional Schottky diodes, SBR devices deliver lower conduction losses, better surge capability, and dramatically reduced reverse leakage at high temperatures. Within the discrete-semiconductor hierarchy, SBR rectifiers sit between standard Schottky diodes and ultrafast recovery rectifiers, occupying a role within the discrete semiconductor -> rectifier family used in power conversion. Key features of the SBRFP2M60P1Q include ultra-low reverse leakage at the blocking mode, a 60 V repetitive peak reverse voltage rating, a 2 A average forward current rating, and a thermally efficient PowerDI-123 package that provides a small PCB footprint with strong heat dissipation. Field-plated construction contributes to the device's high reliability under repetitive avalanche stress. Together, these parameters lower operating temperatures, increase system reliability, and reduce the derating overhead normally applied to standard Schottky rectifiers. Typical applications include polarity-protection (reverse-battery) diodes, DC/DC converters, AC/DC adapters, flyback diodes in switching regulators, and freewheeling/recirculating diodes in motor-control and solenoid driver stages. The automotive-grade qualification opens this door to body-electronics load-dump protection, LED driver freewheeling paths, and battery-management input rectification. When designing with this device, ensure that the steady-state junction temperature stays within the rated envelope by providing sufficient copper land area on the PCB; the PowerDI-123 exposed pad is the primary thermal path. Pay attention to peak repetitive surge currents, since repetitive avalanche can degrade SBR rectifiers, and switch-mode suppliers to surge-protected devices where the device is exposed to continuous high di/dt events. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that complement - and in places extend - the manufacturer datasheet for engineers selecting or second-sourcing the SBRFP2M60P1Q.